NTD6414AN, NVD6414AN
N-Channel Power MOSFET
100 V, 32 A, 37 mW
Features
•
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
AEC Q101 Qualified
−
NVD6414AN
These Devices are Pb−Free and are RoHS Compliant
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I
D
MAX
(Note 1)
32 A
V
(BR)DSS
100 V
R
DS(on)
MAX
37 mW @ 10 V
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Continuous Drain
Current R
qJC
Power Dissipation
R
qJC
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
100
$20
32
22
100
117
−55
to
+175
32
154
W
Unit
V
V
A
N−Channel
D
G
A
°C
A
mJ
1 2
4
1
3
S
4
t
p
= 10
ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 32 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
1.5
37
Unit
°C/W
DPAK
CASE 369AA
STYLE 2
3
IPAK
CASE 369D
STYLE 2
2
YWW
64
14ANG
1
Gate
2
Drain
3
Source
YWW
64
14ANG
1
Gate
2
Drain
3
Source
Publication Order Number:
NTD6414AN/D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
4 Drain
6414AN
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
−
Rev. 1
1
NTD6414AN, NVD6414AN
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
T
a
T
b
Q
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 32 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 32 A, R
G
= 6.1
W
11
52
38
48
0.87
0.76
68
51
16
195
nC
ns
1.2
V
ns
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
gFS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
V
GS
= 10 V, V
DS
= 80 V, I
D
= 32 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
V
GS
= 10 V, I
D
= 32 A
V
GS
= 5.0 V, I
D
= 10 A
V
GS
= V
DS
, I
D
= 250
mA
2.0
8.3
30
18
1450
230
95
40
1.7
8.0
20
5.9
1.9
V
W
nC
37
4.0
V
mV/°C
mW
S
pF
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
100
107
1.0
100
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
"20
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
DRAIN−SOURCE DIODE CHARACTERISTICS
V
GS
= 0 V, I
S
= 32 A
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
70
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
5.0 V
10
0
0
1
2
3
4
4.5 V
5
5.5 V
70
6.5 V
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
T
J
=
−55°C
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
T
J
= 25°C
V
DS
w
10 V
T
J
= 25°C
10 V
7.5 V
6.0 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.07
0.06
0.05
0.04
0.03
0.02
I
D
= 32 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.10
Figure 2. Transfer Characteristics
V
GS
= 10 V
0.08
0.06
0.04
0.02
T
J
=
−55°C
0.00
10
15
20
25
30
35
T
J
= 175°C
T
J
= 125°C
T
J
= 25°C
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
3
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.5
2
I
D
= 32 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
I
DSS
, LEAKAGE (nA)
1000
1.5
1
100
T
J
= 125°C
0.5
−50
−25
0
25
50
75
100
125
150
175
10
10
20
30
40
50
60
70
80
90 100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
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3
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
10
8
6
4
2
0
I
D
= 32 A
T
J
= 25°C
0
5
10
15
20
25
30
Q
g
, TOTAL GATE CHARGE (nC)
35
Q
gs
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2400
C, CAPACITANCE (pF)
2000
1600
1200
800
400
0
C
rss
0
C
oss
C
iss
T
J
= 25°C
V
GS
= 0 V
Q
T
V
DS
Q
gd
V
GS
100
80
60
40
20
0
40
20
40
60
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 7. Capacitance Variation
1000
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
35
I
S
, SOURCE CURRENT (A)
30
25
20
15
10
5
0
0.4
0.5
0.6
0.7
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.9
T
J
= 25°C
V
GS
= 0 V
V
DS
= 80 V
I
D
= 32 A
V
GS
= 10 V
t
r
t
f
t
d(off)
t, TIME (ns)
100
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
100
AVALANCHE ENERGY (mJ)
10
ms
I
D
, DRAIN CURRENT (A)
10
100
ms
1 ms
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
10 ms
dc
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE
175
I
D
= 32 A
1
0.1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2800
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
10
1 D = 0.5
R(t) (°C/W)
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTD6414ANT4G
NTD6414AN−1G
NVD6414ANT4G
Package
DPAK
(Pb−Free)
IPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping†
2500 / Tape & Reel
75 Units / Rail
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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5
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