NTP45N06, NTB45N06
Power MOSFET
45 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
http://onsemi.com
•
•
•
•
•
•
•
•
•
•
•
•
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
45 AMPERES
60 VOLTS
RDS(on) = 26 mΩ
N–Channel
D
Typical Applications
G
4
S
1
TO–220AB
CASE 221A
STYLE 5
2
3
2
3
D2PAK
CASE 418B
STYLE 2
4
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
v10
ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp
v10
µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
Value
60
60
"20
"30
45
30
150
125
0.83
3.2
2.4
–55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Unit
Vdc
Vdc
Vdc
1
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP45N06
LLYWW
1
Gate
2
Drain
3
Source
1
Gate
NTB45N06
LLYWW
TJ, Tstg
2
Drain
3
Source
Single Pulse Drain–to–Source Avalanche
EAS
240
mJ
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25
Ω,
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
NTx45N06
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTP45N06
NTB45N06
NTB45N06T4
Package
TO–220AB
D2PAK
D2PAK
Shipping
50 Units/Rail
50 Units/Rail
800/Tape & Reel
©
Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 0
Publication Order Number:
NTP45N06/D
NTP45N06, NTB45N06
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient (Note 3.)
– Junction–to–Ambient (Note 4.)
Symbol
R
θJC
R
θJA
R
θJA
TL
Value
1.2
46.8
63.2
260
Unit
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
°C
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 5.)
(VGS = 0 Vdc, ID = 250
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS =
±20
Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
(Note 5.)
Gate Threshold Voltage (Note 5.)
(VDS = VGS, ID = 250
µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Note 5.)
(VGS = 10 Vdc, ID = 22.5 Adc)
Static Drain–to–Source On–Voltage (Note 5.)
(VGS = 10 Vdc, ID = 45 Adc)
(VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150°C)
Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 6.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 45 Adc,
Vd
Ad
VGS = 10 Vdc) (Note 5.)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
(IS = 45 Adc, VGS = 0 Vdc,
Ad
Vd
dIS/dt = 100 A/µs) (Note 5.)
Reverse Recovery Stored Charge
3.
4.
5.
6.
(IS = 45 Adc, VGS = 0 Vdc) (Note 5.)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
trr
ta
tb
QRR
–
–
–
–
–
–
1.08
0.93
53.1
36
16.9
0.087
1.2
–
–
–
–
–
µC
Vdc
ns
(VDD = 30 Vdc, ID = 45 Adc,
VGS = 10 Vdc, RG = 9.1
Ω)
(Note 5.)
td(on)
tr
td(off)
tf
QT
Q1
Q2
–
–
–
–
–
–
–
10
101
33
106
33
6.4
15
25
200
70
220
46
–
–
nC
ns
(VDS = 25 Vd VGS = 0 Vdc,
Vdc,
Vd
f = 1.0 MHz)
Ciss
Coss
Crss
–
–
–
1224
345
76
1725
485
160
pF
VGS(th)
2.0
–
RDS(on)
–
VDS(on)
–
–
gFS
–
0.93
0.93
16.6
1.4
–
–
mhos
21
26
Vdc
2.8
7.2
4.0
–
Vdc
mV/°C
mOhm
V(BR)DSS
60
–
IDSS
–
–
IGSS
–
–
–
–
1.0
10
±100
nAdc
70
57
–
–
Vdc
mV/°C
µAdc
Symbol
Min
Typ
Max
Unit
When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2).
When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTP45N06, NTB45N06
90
ID, DRAIN CURRENT (AMPS)
80
70
60
50
40
30
20
10
0
0
4
5
1
2
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
6
VGS = 4.5 V
VGS = 7.5 V
VGS = 5.5 V
VGS = 5 V
VGS = 9 V
VGS = 6.5 V
VGS = 8 V
VGS = 6 V
VGS = 10 V
90
VGS = 7 V
ID, DRAIN CURRENT (AMPS)
80
70
60
50
40
30
20
10
0
3
TJ = 25°C
TJ = 100°C
TJ = –55°C
3.5
4
4.5
5
5.5
6
6.5
7
7.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
8
VDS > = 10 V
Figure 1. On–Region Characteristics
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
Figure 2. Transfer Characteristics
0.05
VGS = 10 V
0.032
0.03
0.028
0.026
0.024
0.022
0.02
0.018
0
10
20
30
40
VGS = 15 V
50
60
70
80
90
VGS = 10 V
0.042
TJ = 100°C
0.034
0.026
TJ = 25°C
0.018
TJ = –55°C
0.01
0
10
20
30
40
50
60
70
80
90
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
RDS(on), DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
–50 –25
10
0
25
50
75
100
125
150
175
0
ID = 22.5 A
VGS = 10 V
10000
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
VGS = 0 V
IDSS, LEAKAGE (nA)
TJ = 150°C
1000
TJ = 125°C
100
TJ = 100°C
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTP45N06, NTB45N06
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
3600
3200
C, CAPACITANCE (pF)
2800
2400
2000
1600
1200
800
400
0
10
VDS = 0 V
Ciss
Crss
VGS = 0 V
12
10
8
6
4
2
0
0
ID = 45
TJ = 25°C
4
8
12
16
20
24
28
32
36
Q1
Q2
QT
VGS
TJ = 25°C
Ciss
Coss
Crss
5 VGS 0 VDS 5
10
15
20
25
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
IS, SOURCE CURRENT (AMPS)
VDS = 30 V
ID = 45 A
VGS = 10 V
tf
tr
td(off)
td(on)
50
Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
VGS = 0 V
TJ = 25°C
40
t, TIME (ns)
100
30
20
10
10
1
1
10
RG, GATE RESISTANCE (Ω)
100
0
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96 1 1.04
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
ID, DRAIN CURRENT (AMPS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
dc
10
10 ms
1 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
100
µs
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
280
Figure 10. Diode Forward Voltage vs. Current
ID = 45 A
240
200
160
120
80
40
0
25
50
75
100
125
150
175
100
0.1
0.10
1
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
NTP45N06, NTB45N06
1
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)
Normalized to R
θJC
at Steady State
0.1
0.01
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
Figure 13. Thermal Response
10
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Normalized to R
θJA
at Steady State,
1″ square Cu Pad, Cu Area 1.127 in2,
3 x 3 inch FR4 board
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 14. Thermal Response
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
