HCF4014B
SYNCHRONOUS PARALLEL OR SERIAL IN/SERIAL OUT
8 - STAGE STATIC SHIFT REGISTER
s
s
s
s
s
s
s
s
MEDIUM SPEED OPERATION :
12 MHz (Typ.) At V
DD
= 10V
FULLY STATIC OPERATION
8 MASTER-SLAVE FLIP-FLOPS PLUS
OUTPUT BUFFERING AND CONTROL
GATING
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
HCF4014BEY
HCF4014BM1
T&R
HCF4014M013TR
DESCRIPTION
The HCF4014B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
This device is an 8-stage parallel or serial input/
serial output register having common CLOCK and
PARALLEL/SERIAL CONTROL inputs, a single
SERIAL data input, and individual parallel "JAM"
inputs to each register stage. Each register stage
is a D-type, master-slave flip-flop in addition to an
output from stage 8, "Q" outputs are also available
from stages 6 and 7. Parallel as well as serial
entry is made into the register synchronously with
the positive clock line transition. In this device,
entry is controlled by the PARALLEL/SERIAL
CONTROL input. When the PARALLEL/SERIAL
CONTROL input is low, data is serially shifted into
the 8-stage register synchronously with the
positive transition of he clock line. When the
PARALLEL/SERIAL CONTROL input is high, data
is jammed into the 8-stage register via the parallel
input lines and synchronous with the positive
transition of the clock line.
PIN CONNECTION
October 2002
1/10
HCF4014B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Value
-0.5 to +22
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-65 to +150
Unit
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
t
r
, t
f
Supply Voltage
Input Voltage
Operating Temperature
Input Rise and Fall Time (PI-1 ... PI-8)
V
DD
= 5V
Parameter
Value
3 to 20
0 to V
DD
-55 to 125
0 to 1000
Unit
V
V
°C
µs
3/10
HCF4014B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200KΩ, t
r
= t
f
= 20 ns)
Test Condition
Symbol
Parameter
V
DD
(V)
CLOCKED OPERATION
t
PLH
t
PHL
Propagation Delay Time
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
160
80
60
100
50
40
6
12
17
90
40
25
320
160
120
200
100
80
ns
Min.
Typ.
Max.
Value (*)
Unit
t
THL
t
TLH
Transition Time
ns
f
CL (1)
Maximum Clock Input
Frequency
Clock Pulse Width
t
W
3
6
8.5
180
80
50
MHz
ns
15
15
15
t
r
, t
f
Clock Input Rise or Fall
Time
Setup Time, serial Input
(ref to CL)
Setup Time, Parallel Inputs
(ref to CL)
Setup Time, Parallel/Serial
Control (ref to CL)
Hold Time, serial in,
parallel in, parallel /serial
control
µs
t
setup
t
setup
t
setup
t
hold
120
80
60
80
50
40
180
80
60
0
0
0
60
40
30
40
25
20
90
40
30
ns
ns
ns
ns
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/°C.
(1) If more than one unit is cascaded t
r
CL should be made less than or equal to the sum of the transition time and the fixed propagation delay
of the output of the driving stage of the estimated capacitive load.
5/10
嵌入式系统
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