There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
J(pk)
= 150°C. T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤
150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
Figure 1. Active−Region Safe Operating Area
500
PD, POWER DISSIPATION (WATTS)
300
200
hFE, DC CURRENT GAIN
100
25°C
50
- 55°C
30
20
10
5.0
0.01
V
CE
= 2.0 V
T
J
= 150°C
90
80
70
60
50
40
30
20
10
0
0
25
125
50
75
100
T
C
, CASE TEMPERATURE (°C)
150
175
MJE3055T
MJE2955T
0.02
0.05 0.1
0.2
0.5 1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
Figure 2. DC Current Gain
MJE2955T
2.0
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
0
0.1
1.4
1.2
T
J
= 25°C
Figure 3. Power Derating
MJE3055T
1.2
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 3.0 V
0.4
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
0.8
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
Figure 4. “On” Voltages
http://onsemi.com
3
MJE2955T (PNP), MJE3055T (NPN)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
4
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
F
T
S
C
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor
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