SUP/SUB70N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(W)
0.010 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
I
D
(A)
70
58
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP70N04-10
SUB70N04-10
N-Channel MOSFET
D S
Top View
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
"20
70
47
140
60
180
107
b
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. Surface mounted on 1” FR4 board.
Document Number: 70783
S-05110—Rev. D, 10-Dec-01
www.vishay.com
Free Air (TO-220)
R
thJA
R
thJC
Symbol
Typical
35
45
1.2
Maximum
40
50
1.4
Unit
_C/W
C/W
2-1
SUP/SUB70N04-10
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
Drain-Source On-State Resistance
a
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
70
0.008
0.014
0.0175
0.011
0.019
0.024
57
0.010
0.017
0.022
0.014
0.024
0.031
S
W
40
1
3
"100
1
50
150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.2
W
I
D
]
70 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 70 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2700
600
160
50
10
9
14
12
58
30
30
30
100
60
ns
100
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
I
s
I
SM
V
SD
t
rr
I
F
= 70 A, V
GS
= 0 V
I
F
= 70 A, di/dt = 100 A/ms
1.0
50
70
A
140
1.5
100
V
ns
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2-2
Document Number: 70783
S-05110—Rev. D, 10-Dec-01
SUP/SUB70N04-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
150
V
GS
= 10 thru 6 V
120
I
D
– Drain Current (A)
5V
I
D
– Drain Current (A)
120
150
T
C
= –55_C
25_C
125_C
90
Transfer Characteristics
90
60
4V
60
30
3V
0
0
2
4
6
8
10
30
0
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
100
T
C
= –55_C
r
DS(on)
– On-Resistance (
Ω
)
80
g
fs
– Transconductance (S)
25_C
125_C
60
0.024
0.030
On-Resistance vs. Drain Current
0.018
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.006
40
20
0
0
20
40
60
80
100
120
0.000
0
20
40
60
80
100
120
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
4000
10
Gate Charge
3200
C – Capacitance (pF)
C
iss
V
GS
– Gate-to-Source Voltage (V)
8
V
GS
= 15 V
I
D
= 70 A
2400
6
1600
4
800
C
oss
C
rss
2
0
0
8
16
24
32
40
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 70783
S-05110—Rev. D, 10-Dec-01
www.vishay.com
2-3
SUP/SUB70N04-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
2.0
I
S
– Source Current (A)
T
J
= 150_C
T
J
= 25_C
10
100
Source-Drain Diode Forward Voltage
1.5
1.0
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
80
200
100
Limited
by r
DS(on)
I
D
– Drain Current (A)
10
1 ms
T
C
= 25_C
Single Pulse
1
10 ms
100 ms
dc
10
ms
100
ms
Safe Operating Area
60
I
D
– Drain Current (A)
40
20
0
0
25
50
75
100
125
150
175
T
A
– Ambient Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
0.1
0.1
1
10
V
DS
– Drain-to-Source Voltage (V)
50
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
3
Square Wave Pulse Duration (sec)
Document Number: 70783
S-05110—Rev. D, 10-Dec-01
www.vishay.com
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
