Freescale Semiconductor
Technical Data
Document Number: MRFE6S9160H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
•
Typical Single - Carrier N - CDMA. Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 1200 mA, P
out
= 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness.
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9160HR3
MRFE6S9160HSR3
880 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRFE6S9160HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRFE6S9160HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
Symbol
R
θJC
Value
(2,3)
0.31
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
MRFE6S9160HR3 MRFE6S9160HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 525
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1200 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
2.2
80.2
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1
—
2.1
0.1
2
3
3.17
0.175
3
—
4.22
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 35 W Avg. N - CDMA, f = 880 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
20
29
—
—
21
31
- 46.8
- 17
23
—
- 45
-9
dB
%
dBc
dB
1. V
GG
= 19/18 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched on input.
(continued)
MRFE6S9160HR3 MRFE6S9160HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 160 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
out
= 35 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
VBW
—
10
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, 865 - 900 MHz Bandwidth
G
F
ΔG
ΔP1dB
—
—
—
0.5
0.016
0.008
—
—
—
dB
dB/°C
dBm/°C
MRFE6S9160HR3 MRFE6S9160HSR3
RF Device Data
Freescale Semiconductor
3
B2
V
BIAS
+
C16 C17
C18
C19
C7
L1
RF
INPUT Z1
C1
C3
C4
C6
DUT
C5
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C8
C10
C11
C12
C13
C14
C15
Z9
Z10
C9
Z11 Z12
Z13
Z14
Z15
Z16 Z17
Z18
C2
Z19
B1
R2
+
R1
C20 C21
L2
RF
OUTPUT
C22 C23 C24
V
SUPPLY
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.426″ x 0.080″ Microstrip
0.813″ x 0.080″ Microstrip
0.471″ x 0.080″ Microstrip
0.319″ x 0.220″ Microstrip
0.171″ x 0.220″ Microstrip
0.200″ x 0.425″ x 0.630″ Taper
0.742″ x 0.630″ Microstrip
0.233″ x 0.630″ Microstrip
0.128″ x 0.630″ Microstrip
0.134″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.066″ x 0.630″ Microstrip
0.630″ x 0.425″ x 0.220″ Taper
0.120″ x 0.220″ Microstrip
0.292″ x 0.220″ Microstrip
0.023″ x 0.220″ Microstrip
0.030″ x 0.220″ Microstrip
0.846″ x 0.080″ Microstrip
0.440″ x 0.080″ Microstrip
0.434″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22, 0.030″,
ε
r
= 2.55
Figure 1. MRFE6S9160HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9160HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C19
C3, C11
C4
C5, C6
C7, C8
C9, C10
C12
C13, C14
C15
C16
C17
C18
C20
C21, C22, C23
C24
L1, L2
R1
R2
Description
Ferrite Beads, Small
47 pF Chip Capacitors
0.8- 8.0 pF Variable Capacitors, Gigatrim
2.7 pF Chip Capacitor
15 pF Chip Capacitors
12 pF Chip Capacitors
4.3 pF Chip Capacitors
8.2 pF Chip Capacitor
3.9 pF Chip Capacitors
0.6- 4.5 pF Variable Capacitor, Gigatrim
22 pF Chip Capacitor
1
μF,
50 V Tantalum Capacitor
20K pF Chip Capacitor
180 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitor
10 nH Inductors
180
Ω,
1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
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Manufacturer
Fair Rite
ATC
Johanson
ATC
ATC
ATC
ATC
ATC
ATC
Johanson
ATC
Kemet
Kemet
ATC
Murata
United Chemi - Con
Coilcraft
Vishay
Vishay
MRFE6S9160HR3 MRFE6S9160HSR3
4
RF Device Data
Freescale Semiconductor
C16
B1
900 MHz
Rev. 2
C18
R2
B2
C24
C17
C21
C22 C23
R1
C19
C20
L1
C5
C7 C9
L2
C14
C1
CUT OUT AREA
C2
C3
C4
C6
C12 C13
C8 C10 C11
C15
Figure 2. MRFE6S9160HR3(SR3) Test Circuit Component Layout
MRFE6S9160HR3 MRFE6S9160HSR3
RF Device Data
Freescale Semiconductor
5
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