* Pb containing terminations are not RoHS compliant, exemptions may apply.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
88
120
65
Maximum
110
150
80
°C/W
Unit
Document Number: 72017
S-81221-Rev. C, 02-Jun-08
www.vishay.com
1
Si6969BDQ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.25 A, dI/dt = 100 A/µs
V
DD
= - 6 V, R
L
= 6
Ω
I
D
≅
- 1.0 A, V
GEN
= - 4.5 V, R
G
= 6
Ω
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 4.6 A
16.5
2
4.7
20
35
110
90
100
40
60
180
150
200
ns
25
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 9.6 V, V
GS
= 0 V
V
DS
= - 9.6 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
- 8 V, V
GS
= - 4.5 V
V
GS
=
- 4.5 V, I
D
= - 4.6 A
V
GS
= - 2.5 V, I
D
= - 3.8 A
V
GS
= - 1.8 V, I
D
= - 3.0 A
V
DS
= - 8 V, I
D
= - 4.6 A
I
S
= - 1.25 A, V
GS
= 0 V
- 30
0.024
0.031
0.044
18
- 0.68
- 1.1
0.030
0.040
0.055
S
V
Ω
- 0.45
- 0.8
± 100
-1
- 25
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
2008年7月17～18日，由深圳创意时代主办的“第四届便携式产品设计与电源管理技术研讨会”在深圳隆重召开。为期两天的大会紧紧围绕便携产品设计、便携电源管理两大主题展开，引起了关于便携主题的广泛讨论。国际知名企业TI、ST 、ADI倾情参与，知名行业分析机构IN-Stat China 预测了行业的最新趋势，3M、飞兆、英飞凌、精工、爱国者、中电等国内外著名企业都发表了精彩演讲。 精彩的...[详细]
TI技术论坛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
