NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
Features
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V
(BR)DSS
R
DS(on)
TYP
0.22
W
@
−4.5
V
−8
V
0.32
W
@
−2.5
V
0.51
W
@
−1.8
V
−0.775
A
I
D
Max
•
•
•
•
•
•
•
•
•
Leading –8 V Trench for Low R
DS(ON)
Performance
ESD Protected Gate
Small Footprint (2 x 2 mm)
Same Package as SC−70−6
Pb−Free Packages are Available
Load Power switching
DC−DC Conversion
Li−Ion Battery Charging Circuits
Cell Phones, Media Players, Digital Cameras, PDAs
Applications
SOT−363
SC−88 (6 LEADS)
S
1
Value
−8.0
±8.0
Unit
V
V
A
D
2
1
6
D
1
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
(Based on R
qJA
)
Power Dissipation
(Based on R
qJA
)
Continuous Drain
Current
(Based on R
qJL
)
Power Dissipation
(Based on R
qJL
)
Pulsed Drain Current
Steady
State
Steady
State
Steady
State
Steady
State
T
A
= 25
°C
T
A
= 85
°C
T
A
= 25
°C
T
A
= 85
°C
T
A
= 25
°C
T
A
= 85
°C
T
A
= 25
°C
T
A
= 85
°C
t
≤10
ms
P
D
I
DM
T
J
,
T
STG
I
S
T
L
I
D
P
D
Symbol
V
DSS
V
GS
I
D
G
1
2
5
G
2
−0.775
−0.558
0.27
0.14
−1.1
−0.8
0.55
0.29
±1.2
−55
to
150
−0.775
260
3
4
S
2
W
Top View
A
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
1
6
TA M
G
G
1
S1 G1 D2
TA
M
G
= Device Code
= Date Code
= Pb−Free Package
W
SC−88/SOT−363
A
CASE 419B
STYLE 28
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
A
°C
(Note: Microdot may be in either location)
Symbol
R
qJA
R
qJL
Typ
400
194
Max
460
226
Unit
°C/W
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Junction−to−Ambient – Steady State
Junction−to−Lead (Drain) – Steady State
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
−
Rev. 3
1
Publication Order Number:
NTJD2152/D
NTJD2152P
ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
=
−4.5
V, I
D
=
−0.57
A
V
GS
=
−2.5
V, I
D
=
−0.48
A
V
GS
=
−1.8
V, I
D
=
−0.20
A
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td
(ON)
tr
td
(OFF)
tf
V
GS
=
−4.5
V, V
DD
=
−4.0
V,
I
D
=
−0.5
A, R
G
= 8.0
W
13
23
50
36
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
=
−4.5
V, V
DS
=
−5.0
V,
I
D
=
−0.6
A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
−8.0
V
160
38
28
2.2
0.1
0.5
0.5
225
55
40
4.0
nC
pF
g
FS
V
GS
=
−4.0
V, I
D
=
−0.57
A
V
GS
= V
DS
, ID =
−250
mA
−0.45
−0.83
2.2
0.22
0.32
0.51
2.0
0.3
0.46
0.9
S
−1.0
V
mV/
°C
W
V
(BR)DSS
V(BR)DSS/
T
J
I
DSS
I
GSS
V
GS
= 0 V, V
DS
=
−6.4
V
V
DS
= 0 V, V
GS
=
±8.0
V
V
GS
= 0 V, I
D
=
−250
mA
−8.0
−10.5
−6.0
1.0
10
V
mV/°C
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
V
GS
= 0 V,
I
S
=
−0.23
A
T
J
= 25°C
T
J
= 125°C
0.76
0.63
78
ns
1.1
V
Reverse Recovery Time
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
=
−0.77
A
2. Pulse Test: pulse width
≤
300ms, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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NTJD2152P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.4
−I
D,
DRAIN CURRENT (AMPS)
1.2
1
0.8
0.6
0.4
0.2
0
0
2
4
6
−1.6
V
V
GS
=
−4.5
V to
−2.6
V
V
GS
=
−2.2
V
−2
V
T
J
= 25°C
−I
D,
DRAIN CURRENT (AMPS)
−1.8
V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
T
J
= 125°C
25°C
T
J
=
−55°C
1.6
0.4
0.8
1.2
2
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.4
V
DS
≥
−10
V
−1.4
V
−1.2
V
8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.5
0.5
0.4
0.3
0.2
0.1
0
0
0.2
Figure 2. Transfer Characteristics
V
GS
=
−4.5
V
V
GS
=
−2.5
V
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0.4
0.3
0.2
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0.1
0
0
0.2
0.6
0.8
0.4
1
−I
D,
DRAIN CURRENT (AMPS)
1.2
1.4
0.6
0.4
0.8
1
−I
D,
DRAIN CURRENT (AMPS)
1.2
1.4
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1
0.8
0.6
−50
I
D
=
−0.7
A
V
GS
=
−4.5
V
and
−2.5
V
300
240
Figure 4. On−Resistance vs. Drain Current and
Temperature
T
J
= 25°C
V
GS
= 0 V
C
iss
C, CAPACITANCE (pF)
180
120
C
oss
60
0
−8
C
rss
−6
−4
−2
0
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
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3
NTJD2152P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
5
4
3
2
1
0
Q
GS
Q
GD
0.7
−I
S
, SOURCE CURRENT (AMPS)
0.6
0.5
0.4
0.3
0.2
0.1
0
2.4
0
0.2
0.4
0.6
T
J
= 150°C
T
J
= 25°C
0.8
1
V
GS
= 0 V
Q
G(TOT)
V
GS
I
D
=
−0.6
A
T
J
= 25°C
0
0.4
0.8
1.2
1.6
2
Q
g
, TOTAL GATE CHARGE (nC)
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
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NTJD2152P
ORDERING INFORMATION
Device Order Number
NTJD2152PT1
NTJD2152PT1G
NTJD2152PT2
NTJD2152PT2G
NTJD2152PT4
NTJD2152PT4G
Package Type
SOT−363
SOT−363
(Pb−Free)
SOT−363
SOT−363
(Pb−Free)
SOT−363
SOT−363
(Pb−Free)
Tape and Reel Size
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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