PD-96288
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
Low V
CE (ON)
trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-Free
IRG7PH35UDPbF
IRG7PH35UD-EP
C
V
CES
= 1200V
I
NOMINAL
= 20A
G
E
T
J(max)
= 150°C
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low V
CE (ON)
and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
n-channel
C
V
CE(on)
typ. = 1.9V
C
Applications
•
•
•
•
U.P.S.
Welding
Solar Inverter
Induction Heating
GC E
TO-247AC
IRG7PH35UDPbF
GC E
TO-247AD
IRG7PH35UD-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
=15V
Clamped Inductive Load Current, V
GE
=20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
1200
50
25
20
60
80
50
25
80
±30
180
70
-55 to +150
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
f
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
0.65
–––
–––
Units
°C/W
1
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02/08/10
IRG7PH35UDPbF/IRG7PH35UD-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
1200
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
1.2
1.9
2.3
—
-16
22
2.0
2000
2.8
2.5
—
Max.
—
—
2.2
—
6.0
—
—
100
—
3.6
—
±100
Units
V
V/°C
V
V
S
µA
V
nA
Conditions
V
GE
= 0V, I
C
= 250µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 20A, V
GE
= 15V, T
J
= 25°C
I
C
= 20A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 600µA
V
CE
= 50V, I
C
= 20A, PW = 30µs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 20A
I
F
= 20A, T
J
= 150°C
V
GE
= ±30V
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
mV/°C V
CE
= V
GE
, I
C
= 600µA (25°C - 150°C)
gfe
I
CES
V
FM
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
85
15
35
1060
620
1680
30
15
160
80
1750
1120
2870
30
15
190
210
1940
120
40
Max.
130
20
50
1300
850
2150
50
30
180
105
—
—
—
—
—
—
—
—
—
—
Units
I
C
= 20A
nC
V
GE
= 15V
V
CC
= 600V
Conditions
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
µJ
R
G
= 10Ω, L = 200uH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200uH, L
S
= 150nH, T
J
= 25°C
I
C
= 20A, V
CC
= 600V, V
GE
=15V
µJ
R
G
=10Ω, L=200uH, L
S
=150nH, T
J
= 150°C
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200uH, L
S
= 150nH
T
J
= 150°C
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 80A
V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +20V to 0V
eÃ
Energy losses include tail & diode reverse recovery
FULL SQUARE
—
—
—
790
105
40
—
—
—
µJ
ns
A
T
J
= 150°C
V
CC
= 600V, I
F
= 20A
V
GE
= 15V, Rg = 10Ω, L =1.0mH, L
s
= 150nH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, R
G
= 50Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
2
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IRG7PH35UDPbF/IRG7PH35UD-EP
45
40
35
Load Current ( A )
30
25
20
Square Wave:
V
CC
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
I
15
10
5
0
0.1
1
f , Frequency ( kHz )
10
100
Diode as specified
Fig. 1
- Typical Load Current vs. Frequency
60
50
40
IC (A)
150
(Load Current = I
RMS
of fundamental)
200
30
20
10
0
25
50
75
100
125
150
Ptot (W)
100
50
0
0
20
40
60
80
100 120 140 160
T C (°C)
T C (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3-
Power Dissipation vs. Case
Temperature
1000
100
10µsec
100
IC (A)
10
IC (A)
1
DC
100µsec
1msec
10
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
100
VCE (V)
1000
10000
1
10
100
VCE (V)
1000
10000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
≤
150°C; V
GE
=15V
Fig. 5
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
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3
IRG7PH35UDPbF/IRG7PH35UD-EP
80
70
60
50
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
70
60
50
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)
40
30
20
10
0
0
2
4
6
8
10
40
30
20
10
0
0
2
4
6
8
10
Fig. 6-
Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 30µs
80
70
60
50
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
VCE (V)
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 30µs
80
70
60
50
40
30
20
10
0
-40°C
25°C
150°C
ICE (A)
40
30
20
10
0
0
2
4
6
8
10
0
1
2
3
VF (V)
4
5
6
VCE (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 30µs
8
7
6
VCE (V)
Fig. 9
- Typ. Diode Forward Characteristics
tp = 380µs
8
7
6
VCE (V)
5
4
3
2
1
4
8
ICE = 10A
ICE = 20A
ICE = 40A
5
4
3
2
1
ICE = 10A
ICE = 20A
ICE = 40A
12
VGE (V)
16
20
5
10
VGE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
4
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IRG7PH35UDPbF/IRG7PH35UD-EP
8
7
6
VCE (V)
IC, Collector-to-Emitter Current (A)
80
70
60
50
40
30
20
10
0
T J = 25°C
TJ = 150°C
5
4
3
2
1
5
10
ICE = 10A
ICE = 20A
ICE = 40A
15
VGE (V)
20
4
5
6
7
8
9
10
VGE, Gate-to-Emitter Voltage (V)
4000
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V, tp = 30µs
1000
tdOFF
3000
Swiching Time (ns)
Energy (µJ)
EON
2000
EOFF
1000
100
tF
tdON
10
tR
0
0
10
20
IC (A)
30
40
1
0
10
20
IC (A)
30
40
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 680µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
3500
3000
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 680µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
10000
Swiching Time (ns)
2500
EON
1000
td OFF
Energy (µJ)
2000
1500
1000
500
0
20
40
60
80
100
RG (Ω)
EOFF
100
tdON
tR
0
20
40
tF
10
60
80
100
RG (Ω)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 680µH; V
CE
= 600V, I
CE
= 20A; V
GE
= 15V
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 680µH; V
CE
= 600V, I
CE
= 20A; V
GE
= 15V
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