BTS7904B
OptiMOS
®
-T PN Half Bridge
Product Summary
P
V
DS
-30
12.7
-40
N
55
11.7
40
V
mΩ
A
Features
• Dual p- and n-channel MOSFET
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
• Ultra low
R
DS(on)
• 150 °C operating temperature
R
DS(on),max5)
I
D
PG-TO263-5-1
Type
BTS7904B
Package
PG-TO263-5-1
Marking
7904B
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
P
Continuous drain current
1)
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=±20 A
-40
-40
-160
350
-40
-16 / +5
96
-55 ... 150
55/150/56
Value
N
40
40
160
200
40
+16 / -16
3)
69
mJ
A
V
W
°C
A
Unit
1.0
page 1
2008-07-18
BTS7904B
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction -
case
SMD version, device on PCB
P
R
thJC
N
R
thJA
minimal footprint
6 cm
2
cooling area
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
P
V
(BR)DSS
V
GS
=0 V,
I
D
=-1 mA
N
Gate threshold voltage
P
V
GS(th)
N
Zero gate voltage drain current
P
I
DSS
V
GS
=0 V,
I
D
=1 mA
V
DS
=V
GS
,
I
D
=-70 µA
V
DS
=V
GS
,
I
D
=40 µA
V
DS
=-18 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-18 V,
V
GS
=0 V,
T
j
=125 °C
N
V
DS
=18 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=18 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
P
I
GSS
N
Drain-source on-state
resistance
5)
P
R
DS(on)
N
P
N
V
GS
=-16 V,
V
DS
=0 V
V
GS
=16 V,
V
DS
=0 V
V
GS
=-10 V,
I
D
=-20 A
V
GS
=10 V,
I
D
=20 A
V
GS
=-4.5 V,
I
D
=-12.5 A
V
GS
=4.5 V,
I
D
=20 A
-30
55
-1
1.2
-
-
-
-1.5
1.7
-0.01
-
-
-2.1
2.2
-1
µA
V
-
-
-
-
-
-
-
-
1.3
1.8
62
45
K/W
Values
typ.
max.
Unit
-
-1
-100
-
0.01
1
-
-
-
-
-
-
-
1
-10
1
6.9
9.4
17.2
16.5
100
-100
100
12.7
11.7
20.7
20.2
mΩ
nA
1.0
page 2
2008-07-18
BTS7904B
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
P
C
iss
N
Output capacitance
P
C
oss
N
Reverse transfer capacitance
P C
rss
N
Turn-on delay time
P
t
d(on)
N
Rise time
P
t
r
N
Turn-off delay time
P
t
d(off)
N
Fall time
P
t
f
N
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Switching charge
Gate plateau voltage
Gate to source charge
Gate to drain charge
Gate charge
Gate plateau voltage
P
Q
gs
Q
gd
Q
g
V
plateau
N
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=44 V,
I
D
=40 A,
V
GS
=0 to 10 V
V
DD
=-24 V,
I
D
=-40 A,
V
GS
=0 to - 10 V
-
-
-
-
-
-
-
-12
-30
-80
-3.0
20
32
82
4.2
-16
-45
-121
-
27
48
123
nC
V
DD
=15 V,
V
GS
=10 V
N:
I
D
=30 A,
R
G
=2
Ω
P:
I
D
=-30 A,
R
G
=2
Ω
V
GS
=0 V,
V
DS
=±25 V,
f
=1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3900
4600
1000
570
850
550
22
15
94
77
104
31
150
8
5200
6100
1300
760
1300
820
-
-
-
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
1.0
page 3
2008-07-18
BTS7904B
Parameter
Symbol Conditions
min.
Reverse Diode
Diode continuous forward
current
2)
Diode pulse current
P
I
S
N
P
I
S,pulse
N
Diode forward voltage
P
V
SD
V
GS
=0 V,
I
F
=-40 A,
T
j
=25 °C
V
GS
=0 V,
I
F
=40 A,
T
j
=25 °C
-
-1.00
T
C
=25 °C
-
-
-40
40
-
-
-160
160
-1.2
V
A
Values
typ.
max.
Unit
N
Reverse recovery time
2)
P
t
rr
N
Reverse recovery charge
2)
P
Q
rr
N
-
-
0.90
41
47
-40
50
1.2
-
-
-
-
nC
ns
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
1.0
page 4
2008-07-18
BTS7904B
1 Power dissipation (P)
P
tot
=f(T
C
),
V
GS
≥6
V
2 Power dissipation (N)
P
tot
=f(T
C
),
V
GS
≥6
V
100
80
80
60
60
P
tot
[W]
P
tot
[W]
40
20
0
0
20
40
60
80
100
120
140
160
40
20
0
0
20
40
60
80
100
120
140
160
T
C
[°C]
T
C
[°C]
3 Drain current (P)
I
D
=f(T
C
)
parameter:
V
GS
≥6
V
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
4 Drain current (N)
I
D
=f(T
C
)
parameter:
V
GS
≥6
V
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
-I
D
[A]
I
D
[A]
T
C
[°C]
T
C
[°C]
1.0
page 5
2008-07-18
NXP MCU
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