MJD122-1 / MJD122T4
MJD127-1 / MJD127T4
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS
Ordering
Code
MJD122T4
MJD122-1
MJD127T4
MJD127-1
s
s
s
Marking
MJD122
MJD122
MJD127
MJD127
Package
TO-252
TO-251
TO-252
TO-251
(DPAK)
(IPAK)
(DPAK)
(IPAK)
Shipment
Tape & Reel
Tube
Tape & Reel
Tube
3
3
2
1
s
s
s
STMicroelectronics PREFERRED SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
THROUGH HOLE TO-251 (IPAK)
POWER PACKAGE IN TUBE (SUFFIX “-1”)
SURFACE MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
ELECTRICALLY SIMILAR TO TIP122 AND
TIP127
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
1
TO-251
IPAK
TO-252
DPAK
(Suffix ”-1”)
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS:
s
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epita xia l Base te chn olo gy for co st- effective
performance.
R
1
Typ. = 10 KΩ
R
2
Typ. = 150
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Total Dissipation at T
c
= 25 °C
Storage Temperature
Max. Operating Junction Temperature
Value
MJD122
MJD127
100
100
5
5
8
0.1
20
–65 to 150
150
V
V
V
A
A
A
W
°C
°C
Unit
For PNP types voltage and current values are negative.
August 2002
1/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
j
= 25 °C unless otherwise specified)
Symbol
I
CBO
I
CEO
I
CEX
I
EBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (V
BE
= -1.5 V)
Emitter Cut-off Current
(I
C
= 0)
V
CB
= 100 V
V
CE
= 50 V
V
CE
= 100 V
V
CE
= 100 V
V
EB
= 5 V
I
C
= 30 mA
100
Test Conditions
Min.
Typ.
Max.
10
10
10
500
2
Unit
µA
µA
µA
µA
mA
V
T
j
= 125 °C
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
*
V
BE(sat)
*
V
BE(on)
*
h
FE
*
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
I
C
= 4 A
I
C
= 8 A
I
C
= 8 A
I
C
= 4 A
I
C
= 4 A
I
C
= 8 A
I
B
= 16 mA
I
B
= 80 mA
I
B
= 80 mA
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
1000
100
2
4
4.5
2.8
12000
V
V
V
V
* Pulsed: Pulse duration = 300 µs, duty cycle
≤
2 %.
For PNP types voltage and current values are negative.
2/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Safe Operating Area
Derating Curve
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
3/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Switching Times Resistive Load (NPN type)
Switching Times Resistive Load (PNP type)
4/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
5/8
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