PD - 95248
SMPS MOSFET
Applications
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
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IRF7463PbF
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
8mΩ
I
D
14A
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
Benefits
l
l
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S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 12
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
10/12/04
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
6.0
7.0
10.5
–––
–––
–––
–––
–––
Max. Units
––– V
––– V/°C
8.0
mΩ
9.5
20
2.0
V
20
µA
100
200
nA
-200
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 14A
V
GS
= 4.5V, I
D
= 11A
V
GS
= 2.7V, I
D
= 7.0A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
IRF7463PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
41
––– –––
S
V
DS
= 24V, I
D
= 11A
–––
34
51
I
D
= 11A
–––
7.6 11.4
nC V
DS
= 15V
–––
12
18
V
GS
= 4.5V
–––
21
32
V
GS
= 0V, V
DS
= 15V
–––
16 –––
V
DD
= 15V
––– 138 –––
I
D
= 11A
ns
–––
28 –––
R
G
= 1.8Ω
–––
6.5 –––
V
GS
= 4.5V
––– 3150 –––
V
GS
= 0V
––– 1070 –––
V
DS
= 15V
––– 180 –––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
320
14
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
2.3
A
110
1.3
–––
70
100
75
120
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.52
––– 0.44
––– 45
––– 65
––– 50
––– 80
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 125°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A, V
R
=15V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 11A, V
R
=15V
di/dt = 100A/µs
2
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IRF7463PbF
1000
VGS
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.0V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
10
1
I
D
, Drain-to-Source Current (A)
100
VGS
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.0V
TOP
10
2.0V
0.1
2.0V
1
0.1
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.0
100.00
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 14A
ID, Drain-to-Source Current (A)
T J = 150°C
1.5
10.00
1.0
1.00
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
0.5
0.10
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
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Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7463PbF
5000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
10
I
D
= 11A
V
GS
, Gate-to-Source Voltage (V)
4000
8
V
DS
= 24V
V
DS
= 15V
C, Capacitance(pF)
3000
Ciss
6
2000
4
Coss
1000
2
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
T
J
= 150
°
C
10
100
10us
100us
T
J
= 25
°
C
1
10
1ms
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
V
SD
,Source-to-Drain Voltage (V)
1
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
10ms
100
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7463PbF
16
V
DS
V
GS
R
D
I
D
, Drain Current (A)
12
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
8
4
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T = P
DM
x Z
thJA
+ T
A
J
0.01
0.1
1
10
100
Thermal Response (Z
thJA
)
0.01
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
NXP MCU
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