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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
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© Nexperia B.V. (year). All rights reserved.
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BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCV61
BCV61A
BCV61B
BCV61C
SOT143B
JEITA
-
BCV62
BCV62A
BCV62B
BCV62C
PNP complement
Type number
1.2 Features
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
1.3 Applications
Applications with working point independent of temperature
Current mirrors
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
collector TR2;
base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
1
2
1
2
006aaa842
Simplified outline
4
3
Graphic symbol
4
3
TR2
TR1
NXP Semiconductors
BCV61
NPN general-purpose double transistors
3. Ordering information
Table 3.
Ordering information
Package
Name
BCV61
BCV61A
BCV61B
BCV61C
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
BCV61
BCV61A
BCV61B
BCV61C
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
1M*
1J*
1K*
1L*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBS
I
C
I
CM
I
BM
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
V
CE
= 0 V
Min
-
-
-
-
-
-
Max
30
30
6
100
200
200
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Per transistor
T
amb
≤
25
°C
[1]
-
-
−65
−65
Device mounted on an FR4 Printed-Circuit Board (PCB).
BCV61_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
2 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Min
-
Typ
-
Max
500
Unit
K/W
thermal resistance from junction in free air
to ambient
Device mounted on an FR4 PCB.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Transistor TR1
I
CBO
collector-base cut-off current
V
CB
= 30 V;
I
E
= 0 A
V
CB
= 30 V;
I
E
= 0 A;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 5 V;
I
C
= 0 A
V
CE
= 5 V;
I
C
= 100
μA
V
CE
= 5 V;
I
C
= 2 mA
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BE
base-emitter voltage
I
C
= 2 mA;
V
CE
= 5 V
I
C
= 10 mA;
V
CE
= 5 V
f
T
transition frequency
V
CE
= 5 V;
I
C
= 10 mA;
f = 100 MHz
V
CB
= 10 V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V;
I
C
= 200
μA;
R
S
= 2 kΩ;
f = 1 kHz;
B = 200 Hz
[1]
Conditions
Min
-
-
Typ
-
-
Max
15
5
Unit
nA
μA
-
100
110
-
-
-
-
580
-
100
-
-
-
90
200
700
900
660
-
-
100
-
800
250
600
-
-
700
770
-
nA
mV
mV
mV
mV
mV
mV
MHz
[1]
[2]
[2]
C
c
collector capacitance
-
2.5
-
pF
NF
noise figure
-
-
10
dB
BCV61_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
3 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
Table 7.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Transistor TR2
V
EBS
emitter-base voltage
V
CB
= 0 V;
I
E
=
−250
mA
V
CB
= 0 V;
I
E
=
−10 μA
h
FE
DC current gain
BCV61
BCV61A
BCV61B
BCV61C
Transistors TR1 and TR2
I
C1
/I
E2
current matching
I
E2
=
−0.5
mA;
V
CE1
= 5 V
T
amb
≤
25
°C
T
amb
≤
150
°C
I
E2
[1]
[2]
[3]
Conditions
Min
-
−400
Typ
-
-
Max
−1.8
-
Unit
V
mV
V
CE
= 5 V;
I
C
= 2 mA
110
110
200
420
-
-
-
-
800
220
450
800
0.7
0.7
[3]
-
-
-
1.3
1.3
−5
mA
emitter current 2
V
CE1
= 5 V
-
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
Device, without emitter resistors, mounted on an FR4 PCB.
BCV61_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
4 of 13
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