BC489, BC489A
High Current Transistors
NPN Silicon
Features
•
These are Pb−Free Devices*
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Collector −Emitter Voltage
Collector Current − Continuous
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
80
80
5.0
0.5
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
2
BASE
3
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC
489x
AYWW
G
G
489x = 489A
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC489G
BC489RL1G
BC489AG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
2000 / Tape & Reel
5000 Units / Bulk
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC489/D
1
March, 2007 − Rev. 3
BC489, BC489A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 60 V, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
Collector −Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc) (Note 1)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle 2.0%.
f
T
C
ob
C
ib
−
−
−
200
7.0
50
−
−
−
MHz
pF
pF
V
CE(sat)
−
−
V
BE(sat)
−
−
0.85
0.9
1.2
−
0.2
0.3
0.5
−
Vdc
h
FE
BC489
BC489A
40
60
100
15
−
−
160
−
−
400
250
−
Vdc
−
V
(BR)CEO
80
V
(BR)CBO
80
V
(BR)EBO
I
CBO
−
−
100
5.0
−
−
−
−
Vdc
nAdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
TURN−ON TIME
5.0
ms
+10 V
0
t
r
= 3.0 ns
−1.0 V
100
V
in
5.0
mF
R
B
100
V
CC
+40 V
R
L
OUTPUT
V
in
TURN−OFF TIME
+V
BB
100
R
B
5.0
mF
5.0
ms
t
r
= 3.0 ns
100
V
CC
+40 V
R
L
OUTPUT
*C
S
< 6.0 pF
*C
S
< 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
BC489, BC489A
BANDWIDTH PRODUCT (MHz)
300
200
V
CE
= 2.0 V
T
J
= 25°C
C, CAPACITANCE (pF)
80
60
40
C
ibo
T
J
= 25°C
100
70
50
20
f T, CURRENT−GAIN
10
8.0
6.0
C
obo
0.2
0.5 1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
4.0
0.1
Figure 2. Current−Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
300
200
t, TIME (ns)
100
70
50
30
20
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
10
t
s
t
f
t
r
t
d
@ V
BE(off)
= 0.5 V
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
10
5.0 7.0
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
Z
qJC(t)
= r(t)
•
R
qJC
Z
qJA(t)
= r(t)
•
R
qJA
20
50
100
200
500
t, TIME (ms)
1.0 k
2.0 k
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−469)
T
J(pk)
− T
C
= P
(pk)
Z
qJC(t)
T
J(pk)
− T
A
= P
(pk)
Z
qJA(t)
0.1
0.07
0.05
0.03
0.02
0.01
1.0
2.0
5.0
10
5.0 k
10 k
20 k
50 k 100 k
Figure 5. Thermal Response
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3
BC489, BC489A
1.0 k
700
500
300
200
100
70
50
30
20
10
1.0
T
A
= 25°C
T
C
= 25°C
1.0 s
100
ms
1.0 ms
IC, COLLECTOR CURRENT (mA)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
BC489
20 30
50
2.0 3.0
5.0 7.0 10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70
100
Figure 6. Active Region — Safe Operating Area
400
T
J
=125°C
hFE , DC CURRENT GAIN
200
25°C
−55°C
100
80
60
40
V
CE
= 1.0 V
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
Figure 7. DC Current Gain
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 10 mA
50
mA
100 mA
250 mA
500 mA
0.6
0.4
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.5
1.0
2.0
5.0
10
50
100
20
I
C
, COLLECTOR CURRENT (mA)
200
500
0.2
0
0.05
0.1
0.2
0.5
2.0
5.0
1.0
10
I
C
, COLLECTOR CURRENT (mA)
20
50
Figure 8. “On” Voltages
Figure 9. Collector Saturation Region
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4
BC489, BC489A
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−0.8
−1.2
V, VOLTAGE (VOLTS)
−1.0
T
J
= 25°C
−0.8
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
V
BE(on)
@ V
CE
= −1.0 V
−1.6
R
qVB
for V
BE
−2.0
−0.4
−2.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
1.0
2.0
5.0
20
50
10
100
I
C
, COLLECTOR CURRENT (mA)
200
500
0
−0.5
−1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
−2.8
0.5
Figure 10. Base−Emitter Temperature Coefficient
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
R
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−1.0
T
J
= 25°C
−0.8
−0.8
Figure 11. “On” Voltages
−1.2
−0.6
−1.6
R
qVB
for V
BE
−0.4
I
C
= −10 mA
−2.0
−50 mA −100 mA
−250 mA −500 mA
−0.2
0
−0.05 −0.1 −0.2
−2.4
−0.5 −1.0 −2.0
−5.0
I
B
, BASE CURRENT (mA)
−10
−20
−50
−2.8
−0.5
−1.0
−2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
−500
Figure 12. Collector Saturation Region
Figure 13. Base−Emitter Temperature Coefficient
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