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1N5282TR

产品描述Diodes - General Purpose, Power, Switching Vr/80V Io/200mA T/R
产品类别分立半导体    二极管   
文件大小198KB,共6页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准
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1N5282TR概述

Diodes - General Purpose, Power, Switching Vr/80V Io/200mA T/R

1N5282TR规格参数

参数名称属性值
Brand NameFairchild Semiconductor
是否无铅不含铅
是否Rohs认证符合
零件包装代码DO-35
包装说明O-PALF-W2
针数2
制造商包装代码AXIAL LEADED; GLASS; JEDEC DO204 ; VARIATION AH
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.9 V
JEDEC-95代码DO-35
JESD-30 代码O-PALF-W2
JESD-609代码e3
元件数量1
端子数量2
最高工作温度175 °C
最大输出电流0.2 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.5 W
认证状态Not Qualified
最大重复峰值反向电压80 V
最大反向恢复时间0.004 µs
表面贴装NO
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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