tee are gallium arsenide beam lead Schottky barrier
diodes. These devices are fabricated on OMCVD
epitaxial wafers using a process designed for high
device uniformity and extremely low parasitics. The
high carrier mobility of gallium arsenide results in
lower series resistance than a silicon Schottky with
equivalent capacitance, resulting in lower noise
figure and conversion loss. The diodes are fully
passivated with silicon nitride and have an additional
layer of a polymer for scratch protection. The
protective coatings prevent damage to the junction
and the anode air bridge during handling.
The high cut-off frequency of these diodes allows
use through millimeter wave frequencies. Typical
applications include single and double balanced
mixers in PCN transceivers and radios, automotive
radar systems and police radar detectors.
The MA4E2039 anti-parallel pair is designed for use
in sub harmonically pumped mixers. Close matching
of the diode characteristics in high LO suppression
at the RF input.
MA4E2039
MA4E2040
Ordering Information
Part Number
MA4E2037
MA4E2038
MA4E2039
MA4E2040
Package
Gel Pack (100 piece per)
Gel Pack (100 piece per)
Gel Pack (100 piece per)
Gel Pack (100 piece per)
Notes: (Unless otherwise specified)
1. Dimensions are in mm (mils).
2. Views are with junction side up.
1
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MA4E20xx Series
GaAs Beam Lead Schottky Diode
Rev. V5
Electrical Specifications: T
A
= +25°C (measured as single diodes)
Parameter & Test Conditions
Junction Capacitance @ 0 V, 1 MHz
Total Capacitance @ 0 V, 1 MHz
1
Junction Capacitance Difference
Series Resistance @ +10 mA
2
Forward Voltage @ +1 mA
Forward Voltage Difference @ +1 mA
Reverse Voltage Breakdown @ -10 µA
Units
pF
pF
pF
Ω
V
V
V
MA4E2037
Min.
—
0.030
—
—
0.60
—
4.5
Typ.
0.020
0.045
—
4.0
0.70
—
7.0
Max.
—
0.060
—
7.0
0.80
—
—
Min.
—
—
—
—
0.60
—
4.5
MA4E2038
Typ.
0.015
0.035
—
6.5
0.70
—
7.0
Max.
—
0.045
—
10.0
0.80
—
—
Parameter & Test Conditions
Junction Capacitance @ 0 V, 1 MHz
3
Total Capacitance @ 0 V, 1 MHz
1,3
Junction Capacitance Difference
Series Resistance @ +10 mA
2
Forward Voltage @ +1 mA
Forward Voltage Difference @ +1 mA
Reverse Voltage Breakdown @ -10 µA
Units
pF
pF
pF
Ω
V
V
V
MA4E2039
Min.
—
0.030
—
—
0.60
—
—
Typ.
0.020
0.045
0.005
4.0
0.70
0.005
—
Max.
—
0.060
0.010
7.0
0.80
0.010
—
Min.
—
0.030
—
—
0.60
—
—
MA4E2040
Typ.
0.020
0.045
0.005
4.0
0.70
0.005
—
Max.
—
0.060
0.010
7.0
0.80
0.010
—
1. Total capacitance is equivalent to the sum of junction capacitance C
J
and parasitic capacitance C
P
.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E20xx Series
GaAs Beam Lead Schottky Diode
Rev. V5
Absolute Maximum Ratings
4,5
Parameter
Incident Power (LO & RF)
Operating Temperature
Storage Temperature
Mounting Temperature
Absolute Maximum
20 dBm
-65°C to +125°C
-65°C to +150°C
+235°C for 10 seconds
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class 0
devices.
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5.
MACOM does not recommend sustained operation near these
survivability limits.
Handling Procedures
The protective polymer coating on the active areas
of these die provides scratch protection, particularly
for the metal air bridge which contacts the anode.
Beam lead devices must, however, must be
handled with care since the leads may be easily
distorted or broken by the normal pressures
exerted when handled by tweezers. A vacuum
pencil with a # 27 tip is recommended for picking
and placing.
Forward Current vs. Temperature
100
Forward Current (mA)
80
+25°C
-40°C
+125°C
Mounting Techniques
These devices are designed to be inserted onto
hard or soft substrates. Recommended methods of
attachment include thermo-compression bonding,
parallel- gap welding, solder reflow and conductive
epoxy.
See application note M541:
“Bonding
and Handling Procedures for Chip Diode
Devices
“ for detailed instructions.
0.5
0.6
0.7
0.8
0.9
1.0
60
40
20
0
0.2
0.3
0.4
Forward Voltage (V)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4E20xx Series
GaAs Beam Lead Schottky Diode
Rev. V5
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
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fully indemnify MACOM for any damages resulting from such improper use or sale.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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