PD - 97034
IRF4905SPbF
IRF4905LPbF
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters Are Differrent from
IRF4905S
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= -55V
R
DS(on)
= 20mΩ
G
S
I
D
= -42A
D
Description
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
D
G
D
S
G
D
S
D
2
Pak
IRF4905SPbF
G
D
TO-262
IRF4905LPbF
S
Absolute Maximum Ratings
Parameter
Gate
Drain
Max.
-70
-44
-42
-280
170
1.3
± 20
Source
Units
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
Ã
h
140
790
See Fig.12a, 12b, 15, 16
-55 to + 150
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
0.75
40
Units
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
–––
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1
8/5/05
IRF4905S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
-55
–––
–––
-2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-0.054
–––
–––
–––
–––
–––
–––
–––
120
32
53
20
99
51
64
7.5
3500
1250
450
4620
940
1530
–––
–––
20
-4.0
–––
-25
-200
100
-100
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
nA
V
mΩ
V
S
µA
Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= -10V, I
D
= -42A
V
DS
= -25V, I
D
= -42A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -42A
V
DS
= -44V
V
GS
= -10V
V
DD
= -28V
I
D
= -42A
R
G
= 2.6
Ω
V
GS
= -10V
V/°C Reference to 25°C, I
D
= -1mA
e
V
DS
= V
GS
, I
D
= -250µA
e
e
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
61
150
-42
A
-280
-1.3
92
220
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -42A, V
GS
= 0V
di/dt = -100A/µs
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
e
T
J
= 25°C, I
F
= -42A, V
DD
= -28V
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF4905S/L
1000
TOP
1000
-ID, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
100
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
10
-4.5V
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1000
-4.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
1000
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
40
Gfs, Forward Transconductance (S)
TJ = 25°C
-ID, Drain-to-Source Current
(Α)
TJ = 25°C
30
TJ = 150°C
20
100.0
TJ = 150°C
10.0
1.0
VDS = -25V
0.1
3
4
5
6
7
8
9
10
10
VDS = -10V
380µs PULSE WIDTH
0
0
20
40
60
80
-ID, Drain-to-Source Current (A)
≤
60µs PULSE WIDTH
11 12
13
14
-VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRF4905S/L
7000
6000
5000
4000
3000
2000
1000
0
1
10
100
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
-VGS, Gate-to-Source Voltage (V)
ID= -42A
16
C, Capacitance (pF)
VDS = -44V
VDS= -28V
VDS= -11V
Ciss
12
8
Coss
4
Crss
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.0
TJ = 150°C
10.0
100
1msec
100µsec
10msec
10
LIMITED BY PACKAGE
1.0
TJ = 25°C
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF4905S/L
80
LIMITED BY PACKAGE
60
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = -42A
VGS = -10V
-ID , Drain Current (A)
1.5
40
1.0
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.1165 0.000068
0.3734
0.2608
0.002347
0.014811
τ
1
0.01
τ
2
Ci=
τi/Ri
Ci
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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