Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
DD
= +3.3V, V
GND
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 100kI to V
DD
/2, T
A
= -40NC to +125NC, unless otherwise noted. Typical values
are at +25NC.) (Note 1)
PARAMETER
POWER SUPPLY
Supply Voltage Range
Supply Current
(per Amplifier)
Power-Supply Rejection Ratio
(Note 2)
Power-Up Time
Shutdown Supply Current
Turn-On Time from Shutdown
(MAX9619)
DC SPECIFICATIONS
Input Offset Voltage (Note 2)
Input Offset Voltage Drift (Note 2)
Input Bias Current (Note 2)
Input Offset Current
Input Common-Mode Range
Common-Mode Rejection Ratio
(Note 2)
V
OS
DV
OS
T
A
=+25NC
I
B
I
OS
V
CM
Guaranteed by
CMRR test
T
A
= +25NC
-40NC
P
T
A
P
+125NC
-0.1
-0.1
122
116
120
123
138
dB
160
135
dB
-40NC
P
T
A
P
+85NC
-40NC
P
T
A
P
+125NC
5
V
DD
+ 0.1
V
DD
+ 0.05
T
A
= +25NC
-40NC
P
T
A
P
+125NC
5
31
0.8
10
25
120
80
95
580
pA
V
pA
FV
nV/NC
V
DD
I
DD
Guaranteed by PSRR, 0NC
P
T
A
P
+70NC
Guaranteed by PSRR, -40NC
P
T
A
P
+125NC
T
A
= +25NC
-40NC
P
T
A
P
+125NC
V
DD
= 1.8V to 5.5V
T
A
= +25NC
-40NC
P
T
A
P
+125NC
119
107
116
135
20
300
50
Fs
nA
Fs
135
dB
1.6
1.8
59
5.5
5.5
78
111
V
FA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
PSRR
t
ON
I
SHDN
t
OSD
0NC
P
T
A
P
+70NC, V
DD
= 1.6V to 5.5V
V
DD
= 0V to 3V step, A
V
= 1V/V
MAX9619 only
V
DD
= 3.3V, V
SHDN
= 0V to 3.3V step
-0.1V
P
V
CM
P
V
DD
+ 0.1V, T
A
= +25NC
CMRR
-0.1V
P
V
CM
P
V
DD
+ 0.05V,
-40NC
P
T
A
P
+125NC
20mV
P
V
OUT
P
V
DD
- 20mV,
R
L
= 100kI to V
DD
/2
150mV
P
V
OUT
P
V
DD
- 150mV,
R
L
= 5kI to V
DD
/2
Open-Loop Gain (Note 2)
AV
OL
2
Maxim Integrated
MAX9617–MAX9620
Single/Dual SC70, Zero-Drift,
High-Efficiency, 1.5MHz Op Amps with RRIO
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= +3.3V, V
GND
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 100kI to V
DD
/2, T
A
= -40NC to +125NC, unless otherwise noted. Typical values
are at +25NC.) (Note 1)
PARAMETER
Input Resistance
SYMBOL
R
IN
Differential
Common mode
R
L
= 100kI to V
DD
/2
V
OH
Output-Voltage Swing
V
OL
Short-Circuit Current
AC SPECIFICATIONS
Gain-Bandwidth Product
Slew Rate
Input Voltage-Noise Density
Input Voltage Noise
Input Current-Noise Density
Phase Margin
Capacitive Loading
Crosstalk
LOGIC INPUT (MAX9619)
Shutdown Input Low
Shutdown Input High
Shutdown Input Leakage Current
V
IL
V
IH
I
IL
/I
IH
1.3
1
100
0.5
V
V
nA
C
L
i
n
GBWP
SR
e
n
0V
P
V
OUT
P
2V
f = 1kHz
0.1Hz
P
f
P
10Hz
f = 1kHz
C
L
= 20pF
No sustained oscillation, A
V
= 1V/V
f = 10kHz (MAX9618)
1.5
0.7
42
0.42
100
60
400
-100
MHz
V/Fs
nV/√Hz
FV
P-P
fA/√Hz
Degrees
pF
dB
I
SC
V
OUT
V
DD
- V
OUT
R
L
= 5kI to V
DD
/2
R
L
= 600I to V
DD
/2
R
L
= 100kI to V
DD
/2
R
L
= 5kI to V
DD
/2
R
L
= 600I to V
DD
/2
50
150
mA
50
11
18
CONDITIONS
MIN
TYP
50
200
12
22
mV
MAX
UNITS
MI
Note 1:
Specifications are 100% tested at T
A
= +25NC (exceptions noted). All temperature limits are guaranteed by design.
STM8S编译错误unable to allocate space for sections/blocks with a total # 欢迎使用Markdown编辑器 笔者用IAR for STM8 开发碰到很多奇怪的问题,都是因为优化等级引起的 首先看这个用dubug编译错误提示: unable to allocate space for sections/blocks with a tot...[详细]
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