NPN SILICON RF TWIN TRANSISTOR
PA861TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5436, 2SC5786)
Q1: High-gain transistor
f
T
= 12.0 GHz TYP.,
½S
21e
½
2
= 9.0 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications
NF = 1.4 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
opt
• 6-pin lead-less minimold package
f
T
= 20.0 GHz TYP.,
½S
21e
½
2
= 13.0 dB TYP. @ V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
BUILT-IN TRANSISTORS
3-pin thin-type ultra super minimold part No.
ORDERING INFORMATION
Part Number
NT
Quantity
PA861TD-A
PA861TD-T3-A
50 pcs (Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
DI
SC
O
The unit sample quantity is 50 pcs.
Document No. PU10057EJ02V0DS (2nd edition)
Date Published February 2002 CP(K)
Remark
To order evaluation samples, contact your nearby sales office.
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
The mark
shows major revised points.
IN
U
Q1
Q2
2SC5436
2SC5786
Supplying Form
ED
PA861TD
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Symbol
Q1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
Q2
9
3
1.5
35
105
Unit
5
3
2
30
90
V
V
V
mA
mW
C
C
195 in 2 elements
Junction Temperature
Storage Temperature
T
j
T
stg
150
65
to +150
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
DI
SC
O
2
Data Sheet PU10057EJ02V0DS
NT
IN
U
ED
PA861TD
ELECTRICAL CHARACTERISTICS (T
A
= +25C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 10 mA
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
MIN.
70
TYP.
110
MAX.
100
100
140
Unit
nA
nA
f
T
½S
21e
½
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
IN
U
Test Conditions
MIN.
TYP.
50
75
17.0
11.0
20.0
13.0
1.4
0.22
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
f
T
½S
21e
½
NF
2
V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
NT
C
re
Note 2
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
Notes 1.
Pulse measurement: PW
350
s, Duty Cycle
2%
2.
Collector to base capacitance when the emitter grounded
DI
SC
O
h
FE
CLASSIFICATION
Rank
FB
vX
Marking
h
FE
Value of Q1
h
FE
Value of Q2
70 to 140
50 to 100
Data Sheet PU10057EJ02V0DS
ED
10.0
7.0
12.0
9.0
1.5
0.4
GHz
dB
dB
pF
2.0
0.8
MAX.
100
100
100
2.5
0.30
Unit
nA
nA
GHz
dB
dB
pF
3
PA861TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25C)
Q1
DI
SC
O
4
Data Sheet PU10057EJ02V0DS
NT
IN
U
Q2
ED
嵌入式系统
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