SUD40N03-18P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.018 @ V
GS
= 10 V
0.027 @ V
GS
= 4.5 V
I
D
(A)
a
"40
"34
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD40N03-18P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
"40
"28
"100
40
62.5
c
7.5
b
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
Junction-to-Case
Junction-to-Lead
Notes
a. Package Limited.
b. Surface Mounted on 1” x1” FR4 Board, t
v
10 sec.
c. See SOA curve for voltage derating.
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
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FaxBack 408-970-5600
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
R
thJL
Typical
17
50
2
4
Maximum
20
60
2.4
4.8
Unit
_C/W
_C/W
2-1
SUD40N03-18P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
b
D i S
O S
R i
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 10 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
10
0.021
40
0.014
0.018
0.029
0.027
S
W
30
V
1.0
"100
1
50
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0 37
W
V,
0.37
I
D
^
40 A, V
GEN
= 10 V R
G
= 2 5
W
A
V,
2.5
V,
V
DS
= 15 V, V
GS
= 10 V I
D
= 40 A
V
V
GS
= 0 V, V
DS
= 25 V F = 1 MH
V
V,
MHz
1300
340
95
19
5
3
8
8.5
17
6
12
13
ns
25
9
30
nC
C
pF
F
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Continuous Current
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 40 A, di/dt = 100 A/ms
30
40
A
80
1.5
50
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
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FaxBack 408-970-5600
2-2
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
SUD40N03-18P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
V
GS
= 10 thru 8 V
120
I D – Drain Current (A)
I D – Drain Current (A)
6V
6V
120
25_C
125_C
80
160
T
C
= –55_C
Vishay Siliconix
Transfer Characteristics
80
5V
40
4V
40
2, 3 V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
60
T
C
= –55_C
50
g fs – Transconductance (S)
25_C
125_C
r DS(on)– On-Resistance (
W
)
0.05
0.06
On-Resistance vs. Drain Current
40
0.04
V
GS
= 4.5 V
0.03
V
GS
= 10 V
0.02
30
20
10
0.01
0
0
20
40
60
80
100
120
0
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
1800
20
Gate Charge
V GS – Gate-to-Source Voltage (V)
1500
C
iss
C – Capacitance (pF)
1200
16
V
DS
= 15 V
I
D
= 40 A
12
900
8
600
C
oss
C
rss
300
4
0
0
5
10
15
20
25
30
0
0
10
20
30
40
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
SUD40N03-18P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 40 A
r DS(on)– On-Resistance (
W
)
(Normalized)
1.6
I S – Source Current (A)
T
J
= 175_C
100
Source-Drain Diode Forward Voltage
1.2
T
J
= 25_C
10
0.8
0.4
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature
50
500
10, 100
ms
Limited
by r
DS(on)
Safe Operating Area
40
I D – Drain Current (A)
I D – Drain Current (A)
100
30
10
1 ms
10 ms
100 ms
1s
dc
20
1
T
C
= 25_C
Single Pulse
10
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
0.1
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
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FaxBack 408-970-5600
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
1
10
30
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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