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NSS40400CF8T1G

产品描述Bipolar Transistors - BJT 4A 40V Low VCEsat
产品类别分立半导体    晶体管   
文件大小45KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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NSS40400CF8T1G概述

Bipolar Transistors - BJT 4A 40V Low VCEsat

NSS40400CF8T1G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
包装说明LEAD FREE, MINIATURE, CASE 1206A-03, CHIPFET, 8 PIN
针数8
制造商包装代码CASE 1206A-03
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)4 A
集电极-发射极最大电压40 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PDSO-C8
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量8
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)1.35 W
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

文档预览

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NSS40400CF8T1G
40 V, 7 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−40
−60
−5.0
−4.0
−7.0
Unit
Vdc
Vdc
Vdc
Adc
A
ChipFET]
CASE 1206A
STYLE 4
5
EMITTER
http://onsemi.com
40 VOLTS
7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
78 mW
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
HBM Class 3B
MM Class C
PIN
CONNECTIONS
C 8
C 7
C 6
E 5
1 C
2 C
3 C
4 B
1
MARKING
DIAGRAM
8
VS9 M
G
7
6
5
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
Max
650
5.2
192
1.57
12.7
79
15
2.75
−55 to
+150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
W
°C
VS9 = Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
2
3
4
ORDERING INFORMATION
Device
NSS40400CF8T1G
Package
ChipFET
(Pb−Free)
Shipping
3000/
Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ 100 mm
2
, 2 oz copper traces.
2. FR−4 @ 500 mm
2
, 2 oz copper traces.
3. Thermal response.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 0
Publication Order Number:
NSS40400CF8/D
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