General purpose (dual transistors)
EMX3 / UMX3N / IMX3
Features
Two 2SC2412AK chips in a EMT or UMT or SMT package.
Inner
circuits
EMX3 / UMX3N
(3)
(2)
(1)
Dimensions
(Unit : mm)
EMX3
0.22
(4)
(5)
(6)
(3)
(2)
(1)
0.13
IMX3
(4)
(5)
(6)
1.2
1.6
Tr
2
Tr
1
Tr
2
Tr
1
ROHM : EMT6
Each lead has same dimensions
(4)
(5)
(6)
(3)
(2)
(1)
UMX3N
(4)
(3)
0.65
1.3
1.1
0.9
0.2
0.5
(6)
(1)
1.25
2.1
0.5 0.5
1.0
1.6
0.8
0.95 0.95
1.9
2.9
0.7
0.65
Package,
marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMX3
EMT6
X3
T2R
8000
UMX3N
UMT6
X3
TR
3000
IMX3
SMT6
X3
T108
3000
ROHM : UMT6
EIAJ : SC-88
0.15
0~0.1
0.1Min.
Each lead has same dimensions
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EEMX3 / UMX3N
IMX3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
150
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
IMX3
(6)
∗1
∗2
0.3
(5)
(4)
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
∗2
200mW per element must not be exceeded.
°C
°C
0.15
1.6
2.8
0.3Min.
ROHM : SMT6
EIAJ : SC-74
0~0.1
Each lead has same dimensions
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
7
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
0.4
560
−
3.5
Unit
V
V
V
μA
μA
V
−
MHz
pF
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=60V
V
EB
=7V
Conditions
I
C
/I
B
=50mA/5mA
V
CE
=6V,
I
C
=1mA
V
CE
=12V,
I
E
=−2mA,
f=100MHz
V
CB
=12V,
I
E
=0mA,
f=1MHz
∗
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2011 ROHM Co., Ltd. All rights reserved.
(3)
(2)
(1)
1/3
2011.12 - Rev.B
2.0
(5)
(2)
EMX3 / UMX3N / IMX3
Electrical
characteristics curves
50
100
Data Sheet
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=6V
80
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100°C
25
°C
−5
5°C
0.50mA
mA
0.45
A
0m
0.4
0.35mA
0.30mA
10
Ta=25°C
30μA
27μA
8
24μA
21μA
60
0.25mA
0.20mA
6
18μA
15μA
2
1
0.5
0.2
0.1
0
40
0.15mA
0.10mA
4
12μA
9μA
20
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
2
6μA
3μA
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics (
Ι
)
Fig.3
Grounded emitter output
characteristics (
ΙΙ
)
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
500
Ta=25°C
DC CURRENT GAIN : h
FE
Ta=100°C
V
CE
=5V
3V
1V
V
CE
=5V
0.5
Ta=25°C
DC CURRENT GAIN : h
FE
200
200
25°C
−55°C
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.5
I
C
/I
B
=10
0.5
I
C
/I
B
=50
TRANSITION FREQUENCY : f
T
(MHz)
500
Ta=25°C
V
CE
=6V
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
0.05
Ta=100°C
25°C
−55°C
0.1
0.05
200
0.02
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100
100
0.01
0.2
0.5 1
2
5
10
20
50 100 200
50
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
Fig.9 Gain bandwidth product vs.
emitter current
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○
2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.12 - Rev.B
Notice
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R1120A