BC856ALT1G Series,
SBC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
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•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
COLLECTOR
3
2
EMITTER
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
Emitter−Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Symbol
V
CEO
Value
−65
−45
−30
V
−80
−50
−30
−5.0
−100
−200
V
mAdc
mAdc
1
Symbol
P
D
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
xx
M
G
xx M
G
G
Unit
V
1
2
3
V
CBO
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
V
EBO
I
C
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
= Device Code
xx = (Refer to page 6)
= Date Code*
= Pb−Free Package
R
qJA
P
D
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
300
2.4
417
−55
to +150
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 13
1
Publication Order Number:
BC856ALT1/D
BC856ALT1G Series, SBC856ALT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSBVC858 BC859 Series
V
(BR)CEO
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
125
220
420
V
CE(sat)
−
−
−
−
−0.6
−
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
90
150
270
180
290
520
−
−
−0.7
−0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−4.0
−
−
−
250
475
800
V
−0.3
−0.65
V
−
−
V
−0.75
−0.82
−
4.5
MHz
pF
dB
−
−
−
−
10
4.0
V
Symbol
Min
Typ
Max
Unit
Collector
−Emitter
Breakdown Voltage
BC856 S, SBC856eries
(I
C
=
−10
mA,
V
EB
= 0) BC857A, SBC857A, BC857B, SBC857B Only
BC858, NSVB858, BC859 Series
Collector
−Base
Breakdown Voltage
(I
C
=
−10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
=
−1.0
mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
Collector Cutoff Current (V
CB
=
−30
V)
Collector Cutoff Current
(V
CB
=
−30
V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
BC856A, SBC856A, BC857A, SBC857A, BC858A
(I
C
=
−10
mA,
V
CE
=
−5.0
V) BC856B, SBC856B, BC857B, SBC857B,
BC858B, NSVBC858B
BC857C, SBC857C BC858C
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
BC856A, SBC856A, BC857A,
SBC857A, BC858A
BC856B, SBC856B, BC857B, SBC857B, BC858B,
NSVBC858B, BC859B
BC857C, SBC857C, BC858C, BC859C
I
CBO
nA
mA
−
h
FE
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
On Voltage
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
(I
C
=
−10
mA, V
CE
=
−5.0
V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mA, V
CE
=
−5.0
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−10
V, f = 1.0 MHz)
Noise Figure
(I
C
=
−0.2
mA, V
CE
=
−5.0
Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series
BC859 Series
V
BE(sat)
V
BE(on)
f
T
C
ob
NF
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2
BC856ALT1G Series, SBC856ALT1G Series
BC857/BC858/BC859/SBC857/NSVBC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
-1.6
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-1.2
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
I
C
= -100 mA
-0.8
-0.4
I
C
= -20 mA
0
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
C
ib
7.0
T
A
= 25°C
C, CAPACITANCE (pF)
5.0
C
ob
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10 V
T
A
= 25°C
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain
−
Bandwidth Product
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3
BC856ALT1G Series, SBC856ALT1G Series
BC856/SBC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= -5.0 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
J
= 25°C
-0.8
V
BE(sat)
@ I
C
/I
B
= 10
-0.6
V
BE
@ V
CE
= -5.0 V
-0.4
-0.2
0.2
0
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.6
I
C
=
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.4
-1.2
-1.8
q
VB
for V
BE
-55°C to 125°C
-0.8
-2.2
-0.4
T
J
= 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
I
B
, BASE CURRENT (mA)
-5.0
-10
-20
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mA)
-100 -200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= -5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
ob
20
-0.5
-1.0 -2.0
-5.0 -10 -20
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain
−
Bandwidth Product
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4
BC856ALT1G Series, SBC856ALT1G Series
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 83.3°C/W MAX
Z
qJA
(t) = r(t) R
qJA
R
qJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
500
1.0 k
2.0 k
5.0 k 10 k
D = 0.5
0.2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
Figure 13. Thermal Response
-200
1s
IC, COLLECTOR CURRENT (mA)
-100
-50
T
A
= 25°C
T
J
= 25°C
3 ms
-10
-5.0
-2.0
-1.0
BC558, BC559
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
The safe operating area curves indicate I
C
−V
CE
limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
Figure 14. Active Region Safe Operating Area
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