电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BC55PA115

产品描述Bipolar Transistors - BJT 60 V, 1 A NPN medium power transistors
产品类别半导体    分立半导体   
文件大小1MB,共23页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
下载文档 详细参数 选型对比 全文预览

BC55PA115在线购买

供应商 器件名称 价格 最低购买 库存  
BC55PA115 - - 点击查看 点击购买

BC55PA115概述

Bipolar Transistors - BJT 60 V, 1 A NPN medium power transistors

BC55PA115规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
NXP(恩智浦)
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-1061-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max60 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
Maximum DC Collector Current2 A
Gain Bandwidth Product fT180 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
Continuous Collector Current1 A
DC Collector/Base Gain hfe Min63 at 150 mA at 2 V
DC Current Gain hFE Max250 at 150 mA at 2 V
最小工作温度
Minimum Operating Temperature
- 55 C
系列
Packaging
Cut Tape
系列
Packaging
Reel
系列
Packaging
MouseReel
Pd-功率耗散
Pd - Power Dissipation
420 mW
Factory Pack Quantityaefsqetzzfzwbcyxbsrecfzdeaevxtbydw3000

文档预览

下载PDF文档
BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
Rev. 8 — 24 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP55
BCX55
BC55PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP52
BCX52
BC52PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
60
1
2
250
160
250
Unit
V
A
A

BC55PA115相似产品对比

BC55PA115 BCX55-16135
描述 Bipolar Transistors - BJT 60 V, 1 A NPN medium power transistors ESD Suppressors / TVS Diodes TVS UNI-DIR 28V 400W
产品种类
Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT
制造商
Manufacturer
NXP(恩智浦) NXP(恩智浦)
RoHS Details Details
安装风格
Mounting Style
SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
SOT-1061-3 SOT-89-3
Transistor Polarity NPN NPN
Configuration Single Single
Collector- Emitter Voltage VCEO Max 60 V 60 V
Collector- Base Voltage VCBO 60 V 60 V
Emitter- Base Voltage VEBO 5 V 5 V
Maximum DC Collector Current 2 A 1 A
Gain Bandwidth Product fT 180 MHz 180 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C
DC Current Gain hFE Max 250 at 150 mA at 2 V 100 at 150 mA at 2 V
最小工作温度
Minimum Operating Temperature
- 55 C - 65 C
Pd-功率耗散
Pd - Power Dissipation
420 mW 1250 mW
系列
Packaging
MouseReel MouseReel

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2042  1951  639  313  1901  47  52  55  34  48 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved