Si4558DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
30
r
DS(on)
(W)
0.040 @ V
GS
= 10 V
0.060 @ V
GS
= 4.5 V
I
D
(A)
"6
"4.8
"6
"4.4
P-Channel
–30
0.040 @ V
GS
= –10 V
0.070 @ V
GS
= –4.5 V
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
2
D
G
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
30
"20
"6
"4.7
"30
2
2.4
P-Channel
–30
"20
"6
"4.7
"30
–2
Unit
V
A
W
1.5
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
N- or P- Channel
52
Unit
_C/W
2-1
Si4558DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –30 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –24 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= 5 V, V
GS
= 10 V
On-State Drain Current
b
O S
D i C
I
D(on)
V
DS
= –5 V, V
GS
= –10 V
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= 10 V, I
D
= 6 A
Drain-Source On-State Resistance
b
D i S
O S
R i
V
GS
= –10 V, I
D
= –6 A
r
DS(on)
V
GS
= 4.5 V, I
D
= 4.8 A
V
GS
= –4.5 V, I
D
= –4.4 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 6 A
V
DS
= –15 V, I
D
= –6 A
I
S
= 2 A, V
GS
= 0 V
I
S
= –2 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.045
0.056
13
10.6
0.77
0.77
1.2
–1.2
V
0.060
0.070
S
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
–30
8.0
–8.0
0.032
0.032
0.040
0.040
W
A
N-Ch
P-Ch
1.0
–1.0
"100
1
–1
5
–5
mA
A
nA
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Diode Forward Voltage
b
V
SD
Dynamic
a
Total Gate Charge
Q
g
N-Ch
N-Channel
N Ch
l
V
DS
= 15 V V
GS
= 10 V I
D
= 6 A
V,
V,
P-Channel
P Ch
l
V
DS
= –15 V, V
GS
= –10 V
I
D
= –6 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
N Ch
l
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= –15 V R
L
= 15
W
15 V,
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
1
10
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
F
= 2 A, di/dt = 100 A/ms
I
F
= –2 A, di/dt = 100 A/ms
N-Ch
P-Ch
16
22
3.4
5.4
2.3
3.6
12
12
12
12
27
38
24
25
45
50
25
25
25
25
55
55
50
50
80
80
ns
30
35
nC
C
Gate-Source Charge
Q
gs
Gate-Drain Charge
Q
gd
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Source-Drain Reverse Recovery Time
t
rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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FaxBack 408-970-5600
2-2
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10, 9, 8, 7, 6, 5 V
30
N-CHANNEL
Transfer Characteristics
24
I D – Drain Current (A)
24
I D – Drain Current (A)
18
4V
12
18
12
T
C
= 125_C
6
25_C
–55_C
0
6
3V
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.150
1500
Capacitance
0.125
r DS(on)– On-Resistance (
W
)
C – Capacitance (pF)
1200
C
iss
900
0.100
0.075
V
GS
= 4.5 V
0.050
V
GS
= 10 V
600
C
oss
300
C
rss
0.025
0
0
6
12
18
24
30
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 6 A
2.0
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
6
r DS(on)– On-Resistance (
W
)
(Normalized)
8
1.6
V
GS
= 10 V
I
D
= 6 A
1.2
4
0.8
2
0.4
0
0
4
8
12
16
0
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
T
J
= 150_C
10
r DS(on)– On-Resistance (
W
)
I S – Source Current (A)
0.10
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
0.04
I
D
= 6 A
0.02
T
J
= 25_C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
32
40
Single Pulse Power
0.2
V GS(th) Variance (V)
–0.0
Power (W)
24
–0.2
16
–0.4
8
–0.6
–0.8
–50
0
0
50
T
J
– Temperature (_C)
100
150
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
2. Per Unit Base = R
thJA
= 52_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
Si4558DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10, 9, 8, 7, 6, 5 V
24
I D – Drain Current (A)
I D – Drain Current (A)
24
30
T
C
= –55_C
25_C
P-CHANNEL
Transfer Characteristics
18
4V
12
18
125_C
12
6
3V
0
0
2
4
6
8
10
6
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
2000
Capacitance
r DS(on)– On-Resistance (
W
)
0.15
C – Capacitance (pF)
1500
C
iss
0.10
V
GS
= 4.5 V
0.05
V
GS
= 10 V
1000
C
oss
500
C
rss
0
0
6
12
18
24
30
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 6 A
2.0
1.8
r DS(on)– On-Resistance (
W
)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
0
0
5
10
15
20
25
0.4
–50
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
8
V
GS
= 10 V
I
D
= 6 A
6
4
2
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70633
S-56944—Rev. E, 23-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-5
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