IRF6712SPbF
IRF6712STRPbF
l
RoHS Compliant and Halogen Free
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for both Sync.FET and some Control FET
Typical values (unless otherwise specified)
DirectFET Power MOSFET
R
DS(on)
Q
gs2
1.7nC
V
DSS
Q
g
tot
V
GS
Q
gd
4.0nC
R
DS(on)
Q
oss
10nC
25V max ±20V max 3.8m@ 10V 6.7m@ 4.5V
Q
rr
14nC
V
gs(th)
1.9V
12nC
application
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
DirectFET ISOMETRIC
SQ
ST
MQ
MX
MT
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
Description
The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Ba se Pa rt Num be r
IRF6712SPbF
Pa cka ge Type
Direc tFET Small Can
Sta nda rd Pa ck
Form
Tape and Reel
Tape and Reel
Orde ra ble Pa rt Num be r
Qua ntity
4800
1000
IRF6712STRPbF
IRF6712STR1PbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
12
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±20
17
13
68
130
13
13
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
25
30
ID= 13A
VDS= 20V
VDS= 13V
A
mJ
A
10
8
6
4
2
0
2
3
4
5
6
7
8
TJ = 25°C
T J = 125°C
ID = 17A
9 10 11 12 13 14 15 16
35
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.14mH, R
G
= 25, I
AS
= 13A.
1
www.irf.com
© 2013 International Rectifier
June 11, 2013
IRF6712SPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
V
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
25
–––
–––
–––
1.4
–––
–––
–––
–––
–––
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
3.8
6.7
1.9
-6.1
–––
–––
–––
–––
–––
12
2.9
1.7
4.0
3.5
5.8
10
1.7
11
40
14
12
1570
490
210
–––
V
Conditions
V
GS
= 0V, I
D
= 250μA
––– mV/°C Reference to 25°C, I
D
= 1mA
m V
GS
= 10V, I
D
= 17A
4.9
8.7
2.4
1.0
150
100
-100
–––
18
–––
–––
–––
–––
–––
–––
3.0
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
GS
= 4.5V, I
D
V
μA
nA
S
V
DS
= V
GS
, I
D
= 50μA
V
DS
= 25V, V
GS
= 0V
i
= 13A
i
––– mV/°C
V
DS
= 25V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 13A
V
DS
= 13V
nC
V
GS
= 4.5V
I
D
= 13A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 13A
R
G
= 1.8
See Fig. 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
0.81
17
14
45
A
130
1.0
26
21
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
T
J
= 25°C, I
F
= 13A
di/dt = 200A/μs
Ãg
i
i
Notes:
Pulse width
400μs; duty cycle
2%.
2
www.irf.com
© 2013 International Rectifier
June 11, 2013
IRF6712SPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.2
1.4
36
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
JA
R
JA
R
JA
R
JC
R
J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.5
–––
Units
°C/W
eÃ
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
4
R
5
R
5
A
1
2
3
4
5
5
A
1
Ri (°C/W)
i
(sec)
1.61955
2.14056
22.2887
20.0457
11.9144
0.000126
0.001354
0.375850
7.41
99
0.1
Ci=
iRi
Ci=
iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
June 11, 2013
3
www.irf.com
© 2013 International Rectifier
IRF6712SPbF
1000
60μs PULSE WIDTH
Tj = 25°C
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
60μs PULSE WIDTH
Tj = 150°C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1
10
0.1
2.5V
2.5V
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
60μs
PULSE WIDTH
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
2.0
ID = 17A
ID, Drain-to-Source Current (A)
1.5
V GS = 10V
V GS = 4.5V
10
1.0
1
0.1
1
2
3
4
5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
25
T J = 25°C
20
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Ciss
1000
Coss
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
15
10
Crss
5
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
50
100
150
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
www.irf.com
© 2013 International Rectifier
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
June 11, 2013
ID, Drain Current (A)
IRF6712SPbF
1000
VGS = 0V
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
T J = 150°C
T J = 25°C
1
T J = -40°C
10
10msec
1msec
1
T A = 25°C
T J = 150°C
Single Pulse
0.10
1.00
10.00
100.00
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VSD, Source-to-Drain Voltage (V)
0.1
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
3.0
70
60
ID, Drain Current (A)
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.5
2.0
ID = 50μA
1.5
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
3.8A
5.4A
BOTTOM 13A
50
40
30
20
10
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
www.irf.com
© 2013 International Rectifier
June 11, 2013
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
