AMMC-6232
8 to 32 GHz GaAs High Linearity Low Noise Amplifier
Data Sheet
Chip Size: 800 μm x 2000μm (31.5 x 78.74 mils)
Chip Size Tolerance: ±10 μm (±0.4 mils)
Chip Thickness: 100 ± 10 μm (4 ±0.4 mils)
Pad Dimensions: 100 x 100 μm (4 x 4 mils)
Description
Avago Technologies AMMC-6232 is an easy-to-use
broadband, high gain, high linearity Low Noise Amplifier
that operates from 18 GHz to 32GHz. The wide band and
unconditionally stable performance makes this MMIC
ideal as a primary or sub-sequential low noise block or
a transmitter or LO driver. The MMIC has 4 gain stages
and requires a 4V, 135mA power supply for optimal
performance. The two gate bias voltages can be combined
for ease of use or separated for more control flexibility. DC-
block capacitors are integrated at the input and output
stages. Since this MMIC covers several bands, it can reduce
part inventory and increase volume purchase options The
MMIC is fabricated using PHEMT technology to provide
exceptional low noise, gain and power performance. The
backside of the chip is both RF and DC ground which
helps simplify the assembly process and reduce assembly
related performance variations and cost.
Attention:Observe precautions for
handling electrostaticsensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control
Features
•
800μm x 2000μm Die Size
•
Unconditionally Stable
Specifications (Vdd = 4.0V, Idd = 135mA)
•
RF Frequencies: 18 - 32 GHz
•
•
•
•
•
•
•
•
High Output IP3: 29dBm
High Small-Signal Gain: 27dB
Typical Noise Figure: 2.8dB
Input, Output Match: -10dB
Applications
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
•
WLL and MMDS loops
Note:
1. This MMIC uses depletion mode pHEMT devices.
Absolute Maximum Ratings
[1]
Parameters / Conditions
Drain to Ground Voltage
Gate-Drain Voltage
Drain Current
Gate Bias Voltage
Gate Bias Current
RF CW Input Power Max
Max channel temperature
Storage temperature
Maximum Assembly Temp
Notes
1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd Vg,
Ig and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
Symbol
Vdd
Vgd
Idd
Vg
Ig
Pin
Tch
stg
Tmax
Unit
V
V
mA
V
mA
dBm
C
C
C
Max
5.5
-8
200
+0.8
1
15
+150
-65 +150
260 for 20s
DC Specifications/ Physical Properties
[2]
Parameter and Test Condition
Drain Supply Current (Vd=4.0 V)
Drain Supply Voltage
Gate Bias Current
Gate Bias Voltage
Thermal Resistance(3)
Symbol
Idd
Vd
Ig
Vg
θjc
Unit
mA
V
mA
V
°C/W
Min
3
-1.3
Typ
135
4
0.1
-0.95
35.1
Max
150
5
-0.55
2. Ambient operational temperature TA=25°C unless noted
3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) =
25°C calculated from measured data.
AMMC-6232 RF Specifications
[4]
T
A
= 25°C, Vdd = 4.0 V, Idd = 135mA, Zo=50 Ω
Parameters and Test Conditions
Small signal gain
(4)
Symbol
AGain
Unit
dB
Frequency
(GHz)
20
26
31
Spec
Min
23
23
23
Typ
32
26.7
24.6
3.2
3.3
4
Max
4.5
4.5
4.5
Noise Figure into 50W
(4)
NF
dB
20
26
31
Output Power at 1dB Gain Compression
(4)
Output Third Order Intercept Point
(4)
P1dB
OIP3
dBm
dBm
20, 26, 31
20
26
31
20, 26, 31
20, 26, 31
20, 26, 31
15
26
26
26
20
28
28
27
-50
-10
-10
Isolation
Input Return Loss
Output Return Loss
S12
S11
S22
dB
dB
dB
4. All tested parameters guaranteed with measurement accuracy ±5dBm for OPI3 and ± 2dB for gain, NF and P1dB.
2
AMMC-6232 Typical Performance[1]
(T
A
= 25°C, Vdd=4V, Idd=135mA, Z
in
= Z
out
= 50 Ω, on-wafer unless noted)
40
30
20
10
0
15
20
25
30
35
Frequency (GHz)
NoiseFigure (dB)
5
4
3
2
1
0
18
20
22
24
26
28
30
32
Frequency (GHz)
Figure 1. Small-signal Gain
0
S21 (dB)
Figure 2. Noise Figure
20
OP1dB (dBm)
S11 (dB)
-10
15
-20
10
-30
15
20
25
30
35
Frequency (GHz)
5
18
20
22
24
26
28
30
32
Frequency (GHz)
Figure 3. Input Return Loss
Figure 4. Output P-1dB
0
OIP3 (dBm)
40
30
20
10
0
-5
S22 (dB)
-10
-15
-20
15
20
25
30
Frequency (GHz)
35
18
20
22
24
26
28
30
32
Frequency (GHz)
Figure 5. Output Return Loss
Note
1. Noise Figure is measured with a 3-dB pad at the input .
Figure 6. Output IP3
3
AMMC-6232 Typical Performance (Cont)
(T
A
= 25°C, Vdd=4V, Idd=135mA, Z
in
= Z
out
= 50 Ω, on-wafer unless noted)
-20
-30
200
170
Idd (mA)
140
110
80
50
15
20
25
30
35
S12 (dB)
-40
-50
-60
-70
Frequency (GHz)
3
3.5
4
Vdd (V)
4.5
5
Figure 7. Isolation
40
30
S21 (dB)
20
4V
10
0
15
20
25
30
35
Frequency (GHz)
5V
3V
Figure 8. Idd Over Vdd (same Vg)
5
NoiseFigure (dB)
4
3
2
1
0
18
20
22
24
26
28
30
32
Frequency (GHz)
3V
4V
5V
Figure 9. Small-signal Gain Over Vdd
Figure 10. Noise Figure Over Vdd
0
-10
-20
-30
15
20
25
30
35
Frequency (GHz)
4V
3V
5V
0
-10
-20
-30
15
4V
5V
3V
S11 (dB)
S22 (dB)
20
25
30
35
Frequency (GHz)
Figure 12. Output Returrn Loss Over Vdd
Figure 11. Input Return Loss Over Vdd
AMMC-6232 Typical Performance (Cont)
(T
A
= 25°C, Vdd=4V, Idd=135mA, Z
in
= Z
out
= 50 Ω, on-wafer unless noted)
25
OP1dB (dBm)
40
OIP3 (dBm)
30
20
10
0
32
3V
4V
5V
20
15
3V
10
5
18
20
22
24
26
28
4V
5V
30
18
20
22
24
26
28
30
32
Frequency (GHz)
Frequency (GHz)
Figure 14. Output IP3 Over Vdd
Figure 13. Output P1dB Over Vdd
40
5
NoiseFigure (dB)
4
3
2
1
0
35
30
S21 (dB)
20
25C
-45C
25C
85C
10
0
15
20
25
30
Frequency (GHz)
85C
-40C
18
20
22
24
26
28
30
32
Frequency (GHz)
Figure 16. Noise Figure Over Temperature
0
-10
-20
-30
25C
85C
-40C
Figure 15. Small-signal Gain Over Temperature
0
-20
25C
-40C
85C
-30
15
S22 (dB)
S11 (dB)
-10
20
25
30
Frequency (GHz)
35
15
20
25
30
Frequency (GHz)
35
Figure 17. Output P-1dB Over Vdd
Figure 18. Output IP3 Over Vdd
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