IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
9.1
3.0
5.9
Single
S
FEATURES
- 50
0.50
• Surface Mountable (Order as IRFR9010,
SiHFR9010)
• Straight Lead Option (Order as IRFU9010,
SiHFU9010)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
G
S
G
D S
D
P-Channel MOSFET
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
DPAK (TO-252)
SiHFR9010TR-GE3
a
IRFR9010TRPbF
a
SiHFR9010T-E3
a
DPAK (TO-252)
SiHFR9010TRL-GE3
a
IRFR9010TRLPbF
a
SiHFR9010TL-E3
a
IPAK (TO-251)
SiHFU9010-GE3
IRFU9010PbF
SiHFU9010-E3
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9010-GE3
IRFR9010PbF
SiHFR9010-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 50
± 20
- 5.3
- 3.3
- 21
0.20
136
- 5.3
2.5
25
5.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Pulsed Drain
I
DM
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
b
a
Repetitive Avalanche Current
I
AR
a
E
AR
Repetitive Avalanche Energy
Maximum Power Dissipation
T
C
= 25 °C
P
D
c
Peak Diode Recovery dV/dt
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
d
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 9.7 mH, R
g
= 25
,
peak I
L
= - 5.3 A.
c. I
SD
- 5.3 A, dI/dt
- 80 A/μs, V
DD
40 V, T
J
150 °C, suggested R
g
= 24
.
d. 0.063" (1.6 mm) from case.
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink
Maximum Junction-to-Case (Drain)
a
SYMBOL
R
thJA
R
thCS
R
thJC
MIN.
-
-
-
TYP.
-
1.7
-
MAX.
110
-
5.0
°C/W
UNIT
Note
a. Mounting pad must cover heatsink surface area.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= max. rating, V
GS
= 0 V
V
DS
= 0.8 x max. rating, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 2.8 A
b
V
DS
- 50 V, I
DS
= - 2.8 A
- 50
- 2.0
-
-
-
-
1.1
-
-
-
-
-
0.35
1.7
-
- 4.0
± 500
- 250
- 1000
0.5
-
V
V
nA
μA
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 9
I
D
= - 4.7 A, V
DS
= 0.8 x max.
rating, see fig. 16
V
GS
= - 10 V
(Independent operating
temperature)
V
DD
= - 25 V, I
D
= - 4.7 A,
R
g
= 24
,
R
D
= 5.6
,
see fig. 15
(Independent operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact.
-
-
-
-
-
-
-
-
-
-
D
240
160
30
6.1
2.0
3.9
6.1
47
13
35
4.5
7.5
-
-
-
9.1
3.0
5.9
9.2
71
20
59
-
nH
-
ns
nC
pF
-
G
-
S
-
-
-
33
0.090
-
-
-
75
0.22
- 5.3
A
- 18
- 5.5
160
0.52
V
ns
μC
G
S
T
J
= 25 °C, I
S
= - 5.3 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 4,7 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width
300 μs; duty cycle
2 %.
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 2 - Typical Transfer Characteristics
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 3 - Typical Saturation Characteristics
Fig. 6 - Typical Source-Drain Diode Forward Voltage
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Normalized On-Resistance vs. Temperature
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 13a - Maximum Avalanche vs. Starting Junction
Temperature
L
Vary t
p
to obtain
required I
L
R
g
V
DS
D.U.T.
-
+ V
DD
- 10 V
t
p
0.05
Ω
I
L
Fig. 13b - Unclamped Inductive Test Circuit
I
AS
V
DS
I
L
V
DD
Fig. 12 - Maximum Drain Current vs. Case Temperature
t
p
V
DS
Fig. 13c - Unclamped Inductive Waveforms
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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