b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74423
S-81956-Rev. B, 25-Aug-08
SUD50P04-23
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
80
V
GS
= 10 thru 4
V
64
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.6
2.0
48
1.2
32
3
V
16
0.8
T
C
= 125 °C
0.4
25 °C
0
0
1
2
3
4
5
0.0
0.0
- 55 °C
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
50
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
40
25 °C
0.04
0.05
Transfer Characteristics
30
125 °C
0.03
V
GS
= 4.5
V
V
GS
= 10
V
20
0.02
10
0.01
0
0
7
14
I
D
- Drain Current (A)
21
28
0.00
0
16
32
48
64
80
I
D
- Drain Current (A)
Transconductance
0.20
3000
On-Resistance vs. Drain Current
R
DS(on)
- On-Resistance (Ω)
0.16
C - Capacitance (pF)
2400
C
iss
1800
0.12
0.08
125 °C
0.04
25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
1200
600
C
rss
0
0
8
16
C
oss
24
32
40
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74423
S-81956-Rev. B, 25-Aug-08
Capacitance
www.vishay.com
3
SUD50P04-23
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
= 30 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
V
DS
= 20
V
6
1.8
2.1
I
D
= 15 A
V
GS
= 4.5
V
(Normalized)
V
DS
= 10
V
1.5
V
GS
= 10
V
1.2
4
V
DS
= 30
V
2
0.9
0
0
10
20
30
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.7
On-Resistance vs. Junction Temperature
10
I
S
- Source Current (A)
T
J
= 150 °C
0.5
I
D
= 250 µA
V
GS(th)
(V)
1
0.3
I
D
= 5 mA
0.1
0.1
T
J
= 25 °C
0.01
- 0.1
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
- 0.3
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
200
200
Threshold Voltage
160
160
Power (W)
Power (W)
120
120
80
80
40
40
0
0.001
0.01
0.1
Time (s)
1
10
100
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Case
www.vishay.com
4
Document Number: 74423
S-81956-Rev. B, 25-Aug-08
SUD50P04-23
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
100
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
100
µs
1 ms
10 ms
100 ms
DC
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
T
A
= 25 °C
Single Pulse
10 s
DC
BVDSS
Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
1
0.1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
9
35
7
I
D
- Drain Current (A)
28
5
I
D
- Drain Current (A)
Safe Operating Area, Junction-to-Case
21
4
14
Package Limited
2
7
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature (°C)
T
A
- Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
Current Derating**, Junction-to-Case
** The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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