电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SMBZ5921B-E3-5B

产品描述Zener Diodes 6.8 Volt 3.0 Watt 5%
产品类别半导体    分立半导体   
文件大小112KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SMBZ5921B-E3-5B在线购买

供应商 器件名称 价格 最低购买 库存  
SMBZ5921B-E3-5B - - 点击查看 点击购买

SMBZ5921B-E3-5B概述

Zener Diodes 6.8 Volt 3.0 Watt 5%

SMBZ5921B-E3-5B规格参数

参数名称属性值
产品种类
Product Category
Zener Diodes
制造商
Manufacturer
Vishay(威世)
RoHSDetails
Vz - Zener Voltage6.8 V
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
DO-214AA-2
Pd-功率耗散
Pd - Power Dissipation
3 W
Voltage Tolerance5 %
Zener Current220 mA
Zz - Zener Impedance2.5 Ohms
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
ConfigurationSingle
Test Current55.1 mA
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
高度
Height
2.24 mm
Ir - Reverse Current200 uA
长度
Length
4.57 mm
工厂包装数量
Factory Pack Quantity
3200
类型
Type
Voltage Regulator
宽度
Width
3.94 mm
单位重量
Unit Weight
0.003284 oz

文档预览

下载PDF文档
SMBZ5919B thru SMBZ5945B
www.vishay.com
Vishay General Semiconductor
Surface Mount Power Voltage-Regulating Diodes
FEATURES
Low profile package
• Ideal for automated placement
• Low Zener impedance
• Low regulation factor
• Meets MSL level 1, per
LF maximum peak of 260 °C
DO-214AA (SMBJ)
J-STD-020,
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
PRIMARY CHARACTERISTICS
V
Z
P
tot
at T
L
= 75 °C
P
tot
at T
A
= 25 °C
T
J
max.
V
Z
specification
Int. construction
5.6 V to 85 V
3000 mW
550 mW
150 °C
Pulse current
Single
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
TYPICAL APPLICATIONS
For general purpose regulation and protection applications.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum steady state power dissipation at T
L
= 75 °C (fig. 1)
Maximum steady state power dissipation at T
A
= 25 °C (fig. 1)
Operating junction and storage temperature range
(1)
(2)
SYMBOL
P
tot
P
tot
V
F
T
J
, T
STG
VALUE
3000
550
1.5
- 65 to + 150
UNIT
mW
mW
V
°C
Maximum instantaneous forward voltage at 200 mA for all types
Notes
(1)
Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 25-May-12
Document Number: 88485
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1758  2662  1507  1526  1504  6  25  24  45  8 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved