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TN2219A
TN2219A
(TN2222A)
C
TO-226
B
E
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring
collector currents up to 500 mA. Sourced from Process 19. See
PN2222A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40
75
6.0
1.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TN2219A
1.0
8.0
125
50
Units
W
W/°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
TN2219A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
I
BL
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150°C
V
EB
= 3.0 V, I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0
40
75
6.0
10
10
10
10
20
V
V
V
nA
nA
µA
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 1.0 mA
I
C
= 500 mA, I
B
= 5.0 mA
35
50
75
100
50
40
300
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
0.6
0.3
1.0
1.2
2.0
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
rb’C
C
NF
Re(h
ie
)
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter
High Frequency Input Impedance
V
CB
= 10 V, I
E
= 0, f = 100 kHz
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz
I
C
= 10 mA, V
CE
= 10 V, f = 1.0 kHz
I
E
= 20 mA, V
CB
= 20 V, f= 31.8 MHz
I
C
= 100
µA,
V
CE
= 10 V, R
S
= 1.0 kΩ
f = 1.0 kHz, B
W
= 1.0 kHz
I
C
= 20 mA, V
CE
= 20 V,
f = 300 MHz
50
75
8.0
25
300
375
150
4.0
60
pF
pF
pS
dB
Ω
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
10
25
225
60
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
TO-226AE Tape and Reel Data
TO -226AE Packaging
Conf iguratio n:
Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION
L OT:
S e Fig 2
e
.0 for va rious
HTB:B
10000
Reeli g Styles
n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V:
QA REV:
D/C1:
D9842
B2
Labe l
5 Reels per
Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019
QTY: 2000
Cus tom ized
Labe l
F63TNR
Labe l
Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Labe l
375m m x 267m m x 375mm
Int er med iate B ox
AMMO PACK OPTION
S e Fig 3
e
.0 for 2 Ammo
Pack Option
s
TO-226AE TNR/AMMO PACKING INF R
O MATION
Packing
Reel
Style
A
E
Qua
ntity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
Am m o
M
P
FSCINT
Labe l
327m m x 158m m x 135mm
Im med iate B ox
5 A mm o box es per
Int er med iate B ox
Uni t wei gh t
Reel weig ht wi th c om po nents
Amm o weig ht wi th c omp on en ts
= 0.300g m
= 0.868 k g
= 0.880 k g
Cus tom ized
Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
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