NSS30071MR6T1G
30 V, 0.7 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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30 VOLTS
0.7 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
200 mW
•
This is a Pb−Free Device
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 85°C
Thermal Resistance − Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
C
= 25°C
Total Power Dissipation @ T
C
= 85°C
Thermal Resistance − Junction−to−Ambient
(Note 2)
Operating and Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
P
D
R
qJA
P
D
P
D
R
qJA
T
J
, T
stg
Value
30
40
5.0
700
350
342
178
366
665
346
188
−55 to
+150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
VS3
M
4
6 5
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
1 2
3
SC−74
CASE 318F
STYLE 2
DEVICE MARKING
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided),
Operating to Steady State.
VS3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NSS30071MR6T1G
Package
Shipping
†
SC−74 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
NSS30071MR6/D
June, 2005 − Rev. 0
NSS30071MR6T1G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Collector −Base Breakdown Voltage
Collector −Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(I
C
= 100
mAdc)
(I
C
= 10 mAdc)
(I
E
= 100
mAdc)
(V
CB
= 25 Vdc, I
E
= 0 Adc)
(V
CB
= 25 Vdc, I
E
= 0 Adc, T
A
= 125°C)
(V
EB
= 5.0 Vdc, I
C
= 0 Adc)
40
30
5.0
−
−
−
−
−
−
−
−
−
−
−
−
1.0
10
10
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Min
Typ
Max
Unit
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(on)
DC Current Gain
Collector −Emitter Saturation Voltage
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
(V
CE
= 3.0 Vdc, I
C
= 100 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 700 mAdc, I
B
= 70 mAdc)
(I
C
= 700 mAdc, I
B
= 70 mAdc)
(I
C
= 700 mAdc, V
CE
= 1.0 Vdc)
150
−
−
−
−
−
−
−
−
−
−
0.25
0.4
1.1
1.0
Vdc
Vdc
Vdc
Vdc
Vdc
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2
NSS30071MR6T1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
DIM
A
B
C
D
G
H
J
K
L
M
S
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
0
_
10
_
0.0985 0.1181
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.65
0
_
10
_
2.50
3.00
A
L
6
5
1
2
4
S
3
B
D
G
M
0.05 (0.002)
H
C
K
J
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.074
0.7
0.028
0.95
0.037
0.95
0.037
1.0
0.039
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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