Si4429EDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.0105 @ V
GS
= –10 V
–30
0.0125 @ V
GS
= –4.5 V
0.0195 @ V
GS
= –2.5 V
FEATURES
I
D
(A)
–13.0
–12.0
–9.0
D
TrenchFETr Power MOSFET
D
V
GS
Surge Protection to 18 V
D
ESD Protected: 4000 V
APPLICATIONS
D
Battery Switch
D
Load Switch
D
SO-8
S
S
S
G
1
2
3
4
Top View
S
8
7
6
5
D
G
D
D
D
5.5 kW
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
–2.5
3.0
1.9
–55 to 150
–10.0
–50
–1.3
1.5
0.9
W
_C
–7.5
A
Symbol
V
DS
V
GS
10 secs
Steady State
–30
"12
Unit
V
–13.0
–9.4
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70709
S-04712—Rev. A, 24-Sep-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
32
68
15
Maximum
42
85
18
Unit
_C/W
C/W
1
Si4429EDY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= –24 V, V
GS
= 0 V
V
DS
= –24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
v
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –13.0 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –4.5 V, I
D
= –12.0 A
V
GS
= –2.5 V, I
D
= –9.0 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –15 V, I
D
= –13.0 A
I
S
= –2.5 A, V
GS
= 0 V
–30
0.0086
0.0105
0.0160
40
–0.8
–1.2
0.0105
0.0125
0.0195
S
V
W
–0.60
"20
–1
–5
A
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –15 V, R
L
= 15
W
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
V
DS
= –15 V, V
GS
= –4.5 V, I
D
= –13.0 A
51
9
12.0
14
19
54
41
21
29
80
62
ms
m
75
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
20
10,000
Gate Current vs. Gate-Source Voltage
I
GSS
– Gate Current (mA)
16
I
GSS
– Gate Current (
mA)
1,000
100
12
10
T
J
= 150_C
1
0.1
T
J
= 25_C
8
4
0
0
6
12
18
24
30
0.01
0
5
10
15
20
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 70709
S-04712—Rev. A, 24-Sep-01
Si4429EDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 3 V
40
I
D
– Drain Current (A)
I
D
– Drain Current (A)
40
50
Vishay Siliconix
Transfer Characteristics
30
2V
20
30
20
T
C
= 125_C
10
25_C
–55_C
10
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
9000
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.04
C – Capacitance (pF)
7500
C
iss
6000
0.03
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
0.01
V
GS
= 10 V
0.00
0
10
20
30
40
50
4500
3000
1500
C
rss
0
6
C
oss
0
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 13.0 A
1.6
On-Resistance vs. Junction Temperature
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
4
1.4
V
GS
= 10 V
I
D
= 13.0 A
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
60
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70709
S-04712—Rev. A, 24-Sep-01
www.vishay.com
3
Si4429EDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.080
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
T
J
= 25_C
r
DS(on)
– On-Resistance (
W
)
0.064
I
S
– Source Current (A)
0.048
I
D
= 13.0 A
10
0.032
0.016
1
0
0.3
0.6
0.9
1.2
1.5
0.000
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.6
50
Single Pulse Power, Junction-to-Ambient
0.4
V
GS(th)
Variance (V)
I
D
= 250
mA
0.2
Power (W)
40
30
0.0
29
–0.2
10
–0.4
–50
–25
0
25
50
75
100
125
150
0
10
–2
10
–1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 70709
S-04712—Rev. A, 24-Sep-01
Si4429EDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 70709
S-04712—Rev. A, 24-Sep-01
www.vishay.com
5
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