VS-80PF(R)...(W) High Voltage Series
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Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 80 A
FEATURES
80PF(R)...
80PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-5 (DO-203AB)
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
• Battery charges
• Converters
80 A
DO-5 (DO-203AB)
Single
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
80
123
126
1200
1250
7100
6450
1400 to 1600
-55 to +150
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1650
1900
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
4.5
VS-80PF(R)...(W)
Revision: 11-Jan-18
Document Number: 93527
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
180° conduction, half sine wave
VALUES
80
123
126
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
1200
1250
1000
Sinusoidal half wave,
initial T
J
= 150 °C
1050
7100
6450
5000
4550
71 000
0.73
3.0
1.46
A
2
s
V
m
V
A
2
s
A
UNITS
A
°C
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)
r
f
V
FM
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 220 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads, tighting on nut
(1)
Lubricated threads, tighting on nut
(1)
Allowable mounting torque
Not lubricated threads, tighting on Hexagon
(2)
Lubricated threads, tighting on Hexagon
(2)
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-55 to 180
0.30
K/W
0.25
3.4
(30)
2.3
(20)
4.2
(37)
3.2
(28)
15.8
0.56
g
oz.
N·m
(lbf · in)
UNITS
°C
DO-5 (DO-203AB)
Notes
(1)
Recommended for pass-through holes
(2)
Torque must be applicable only to Hexagon and not to plastic structure, recommended for holed heatsink
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.14
0.16
0.21
0.30
0.50
RECTANGULAR CONDUCTION
0.10
0.17
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93527
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80PF(R)...(W) High Voltage Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
1200
1100
1000
900
800
700
600
500
400
300
200
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= T
J
Max.
No Voltage Reapplied
Rated V
RRM
Reapplied
160
Maximum Allowable Case Temperature (°C)
150
80PF(R) Series
140 to 160
RthJC = 0.3 K/W
140
180° Sine
130
120
80PF(R) Series
70HF(R) Series
140 to 160
0.1
Pulse Train Duration (s)
1
110
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
1100
1000
900
800
700
600
500
400
300
1
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= T
J
Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
Tj = 25°C
100
Tj = Tj Max
10
80PF(R) Series
70HF(R) Series
140 to 160
10
100
70HF(R) Series
80PF(R) Series
(140 to 160)
140 to 160
1
0
0.5 1 1.5 2 2.5 3 3.5
Instantaneous Forward Voltage (V)
4
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
0.1
80PF(R) Series
80PF(R) Series
140 to 160
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 11-Jan-18
Document Number: 93527
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80PF(R)...(W) High Voltage Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
80
2
PF
3
R
4
160
5
W
6
1
2
3
4
5
6
-
-
-
-
-
-
Vishay Semiconductors product
80 = standard device
PF = plastic package
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = standard terminal
(see dimensions for 80PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 80PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 11-Jan-18
Document Number: 93527
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W),
and 95PF(R)...(W) Series
DIMENSIONS FOR 80PF(R), 50PF(R), AND 95PF(R) SERIES
in millimeters
6.45 MIN.
Ø3
4.2 MAX.
1.2 MAX.
3.5 MIN.
4 MIN.
Plastic cap.
25.4 MAX.
11.45 MAX.
2.4 REF.
11 ± 0.4
1/4"28-UNF-2A
17.25 MAX.
Ø 15.95 MAX.
Ø 17.15 MAX.
18.9
+ 0.1
0.0
Revision: 20-Apr-16
Document Number: 95345
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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