1N8030-GA
V
RRM
I
F
Q
C
Package
RoHS Compliant
PIN 1
PIN 2
PIN 3
NC
High Temperature Silicon Carbide
Power Schottky Diode
Features
650 V Schottky rectifier
210 °C maximum operating temperature
Electrically isolated base-plate
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of V
F
Temperature independent switching behavior
Lowest figure of merit Q
C
/I
F
Available screened to Mil-PRF-19500
=
=
=
650 V
2.5 A
7 nC
1 2 3
TO – 257 (Isolated Base-plate Hermetic Package)
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at T
j
= 210 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
I t value
Power dissipation
Operating and storage temperature
Symbol
V
RRM
I
F
I
F
I
F(RMS)
I
F,SM
I
F,max
2
∫i dt
P
tot
T
j
, T
stg
Conditions
T
C
= 25 °C
T
C
≤ 190 °C
T
C
≤ 190 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 25 °C
Values
650
2.5
0.75
1.3
10
65
0.5
24
-55 to 210
Unit
V
A
A
A
A
A
2
AS
W
°C
Electrical Characteristics at T
j
= 210 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 0.75 A, T
j
= 25 °C
I
F
= 0.75 A, T
j
= 210 °C
V
R
= 650 V, T
j
= 25 °C
V
R
= 650 V, T
j
= 210 °C
I
F
≤ I
F,MAX
V
R
= 400 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 210 °C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 650 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.4
2.3
1
5
7
< 17
76
12
12
max.
Unit
V
5
50
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
9.52
°C/W
Mechanical Properties
Mounting torque
M
0.6
Nm
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1N8030-GA
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = t
P
/T, t
P
= 400 µs)
(Considering worst case Z
th
conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Dec 2014
Figure 6: Typical Capacitive Energy vs Reverse Voltage
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Characteristics
Characteristics
1N8030-GA
Figure 7: Current vs Pulse Duration Curves at T
C
= 190 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
TO-257
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
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Revision History
Date
2014/08/26
2012/04/24
Revision
1
0
Comments
Updated Electrical Characteristics
Initial release
1N8030-GA
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Dec 2014
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