IRFH5210PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
100
14.9
40
1.7
55
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Features and Benefits
Features
Low R
DSon
(≤ 14.9mΩ at Vgs = 10V)
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRFH5210TRPBF
IRFH5210TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
100
±20
10
8.1
55
35
220
3.6
104
0.029
-55 to + 150
Units
V
A
g
g
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
Notes
through
are on page 9
1
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2015 International Rectifier
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March 16, 2015
IRFH5210PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
66
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.10
12.6
–––
-9.3
–––
–––
–––
–––
–––
40
7.4
3.2
11
18.4
14.2
11
1.7
7.2
9.7
21
6.5
2570
260
100
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
14.9
mΩ V
GS
= 10V, I
D
= 33A
4.0
V
V
DS
= V
GS
, I
D
= 100μA
––– mV/°C
20
V
DS
= 100V, V
GS
= 0V
μA
250
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 50V, I
D
= 33A
60
V
DS
= 50V
–––
–––
V
GS
= 10V
nC
I
D
= 33A
–––
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 50V, V
GS
= 10V
I
D
= 33A
R
G
=1.65Ω
See Fig.15
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Max.
86
33
Conditions
MOSFET symbol
showing the
integral reverse
G
S
pF
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
Typ.
–––
–––
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
55
A
220
h
D
Ã
–––
–––
1.3
V
–––
29
44
ns
–––
165
250
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 33A, V
GS
= 0V
T
J
= 25°C, I
F
= 33A, V
DD
= 50V
di/dt = 500A/μs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
1.2
15
35
22
Units
°C/W
2
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2015 International Rectifier
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March 16, 2015
IRFH5210PbF
1000
TOP
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
TOP
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.8V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
10
3.8V
0.1
3.8V
≤
60μs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
10
1
100
1000
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60 -40 -20 0
20 40 60 80 100 120 140 160
ID = 33A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
VDS = 50V
≤60μs
PULSE WIDTH
1.0
2
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 33A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 80V
VDS= 50V
VDS= 20V
Ciss
1000
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
March 16, 2015
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IRFH5210PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100μsec
1msec
10msec
10
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
1000
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
60
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.5
4.0
3.5
3.0
2.5
2.0
1.5
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
50
ID, Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.01
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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March 16, 2015
IRFH5210PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
35
EAS , Single Pulse Avalanche Energy (mJ)
400
ID = 33A
30
TJ = 125°C
25
20
15
10
5
2
4
6
8
10
12
14
16
18
20
T J = 25°C
300
ID
TOP
3.4A
8.6A
BOTTOM 33A
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2015 International Rectifier
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March 16, 2015
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