IXYS
Date: 23.05.2005
Data Sheet Issue: 2
Dual Diode Water Cooled Modules MD
#
950
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
1200
1400
1600
1800
2000
2200
MDD
950-12N1W
950-14N1W
950-16N1W
950-18N1W
950-20N1W
950-22N1W
MDA
950-12N1W
950-14N1W
950-16N1W
950-18N1W
950-20N1W
950-22N1W
MDK
950-12N1W
950-14N1W
950-16N1W
950-18N1W
950-20N1W
950-22N1W
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage
1)
1)
MAXIMUM
LIMITS
1200-2200
1300-2300
UNITS
V
V
Non-repetitive peak reverse voltage
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
TSM
I
TSM2
It
It
V
isol
T
vj op
T
stg
Notes:
1)
2)
3)
4)
5)
2
2
MAXIMUM
LIMITS
2), 3)
2), 3)
2), 3)
UNITS
A
A
A
A
A
kA
kA
Maximum average forward current. T
water
= 17°C, 4l/min
Maximum average forward current. T
water
= 45°C, 4l/min
Maximum average forward current. T
water
= 85°C, 4l/min
Nominal RMS forward current. T
water
= 17°C, 4l/min
D.C. forward current. T
water
= 17°C, 4l/min
3)
4)
2), 3)
1129
950
668
1773
1427
21.8
24.0
2.38×10
2.88×10
3500
-40 to +150
-40 to +125
6
6
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
Peak non-repetitive surge t
p
= 10 ms, V
RM
≤
10 V
I t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
I t capacity for fusing t
p
= 10 ms, V
RM
≤
10 V
Isolation Voltage
5)
2
4)
2
4)
4)
As
As
V
°C
°C
2
2
Operating temperature range
Storage temperature range
De-rating factor of 0.13% per °C is applicable for T
Vj
below 25°C.
Single phase; 50 Hz, 180° half-sinewave.
Current ratings do not include adjustments, which may be necessary due to heat being returned by cable connections.
Half-sinewave, 150°C T
Vj
initial.
AC RMS voltage, 50 Hz, 1min test.
Data Sheet. MD#950-12N1W to 22N1W Issue 2
Page 1 of 9
May, 2005
IXYS
Characteristics
PARAMETER
V
FM
V
FM
V
T0
r
T
I
RRM
Q
rr
Q
ra
I
rm
t
rr
Maximum peak forward voltage
Maximum peak forward voltage
Threshold voltage
Slope resistance
Peak reverse current
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Dual Diode Module Types MD#950-12N1W to MD#950-22N1W
MIN.
-
-
-
-
-
-
-
-
-
-
4.25
10.2
-
TYP.
-
-
-
-
-
1800
1500
165
18
-
-
-
1.2
MAX.
1.35
0.88
0.75
0.2
50
-
1750
-
-
0.09
5.75
13.8
-
TEST CONDITIONS
I
FM
= 2850 A
I
FM
= 500 A
1)
UNITS
V
V
V
mΩ
Rated V
RRM
mA
µC
I
FM
= 1000 A, t
p
= 1 ms,
di/dt = 10 A/µs, V
r
= 50 V
µC
A
µs
K/W
Nm
R
thJW
Thermal resistance, junction to water
F
1
F
2
W
t
Notes:
1) Unless otherwise indicated T
vj
= 150°C
2) Screws must be lubricated
Single Diode
2)
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
Nm
kg
Data Sheet. MD#950-12N1W to 22N1W Issue 2
Page 2 of 9
May, 2005
IXYS
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
12
14
16
18
20
22
V
RRM
V
1200
1400
1600
1800
2000
2200
Dual Diode Module Types MD#950-12N1W to MD#950-22N1W
V
RSM
V
1300
1500
1700
1900
2100
2300
V
R
DC V
820
930
1040
1150
1260
1370
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
2
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
K
Where V
T0
=0.75V, r
T
=0.2mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.0976
0.0950
60°
0.0955
0.0933
90°
0.0942
0.0924
120°
0.0933
0.0917
180°
0.0920
0.0902
270°
0.0907
d.c.
0.090
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
Data Sheet. MD#950-12N1W to 22N1W Issue 2
Page 3 of 9
May, 2005
IXYS
5.2 Calculating V
F
using ABCD Coefficients
Dual Diode Module Types MD#950-12N1W to MD#950-22N1W
The on-state characteristic I
F
vs. V
F
, on page 6 is represented in two ways;
(i) the well established V
T0
and r
T
tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
⋅
ln
(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
F
agree with the true device characteristic over a current range, which is
limited to that plotted.
25°C Coefficients
A
B
C
D
0.46164273
0.1048225
1.6116×10
-4
-3
150°C Coefficients
A
B
C
D
0.435837127
0.06435749
1.84243×10
-4
-3
-7.48063×10
-2.353947×10
Data Sheet. MD#950-12N1W to 22N1W Issue 2
Page 4 of 9
May, 2005
IXYS
5.3 D.C. Thermal Impedance Calculation
p
=
n
Dual Diode Module Types MD#950-12N1W to MD#950-22N1W
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
The coefficients for this device are shown in the tables below:
D.C.
Term
1
0.07972
4.46119
2
3.64310×10
0.71394
-3
3
4.87795×10
0.06312
-3
4
1.91134×10
-3
-3
5
2.16406×10
6.07258×10
-3
-3
r
p
τ
p
5.07740×10
6.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
RM
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150
µs
integration time i.e.
150
µ
s
Q
rr
=
(iii)
∫
i
0
rr
.
dt
t
1
K Factor
=
t
2
Data Sheet. MD#950-12N1W to 22N1W Issue 2
Page 5 of 9
May, 2005
stm32/stm8
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