Philips Semiconductors
Product specification
Dual 4-input NAND gate
74F20
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limits set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free-air temperature range.)
SYMBOL
V
CC
V
IN
I
IN
V
OUT
I
OUT
T
amb
T
stg
Supply voltage
Input voltage
Input current
Voltage applied to output in High output state
Current applied to output in Low output state
Operating free-air temperature range
Storage temperature range
PARAMETER
RATING
–0.5 to +7.0
–0.5 to +7.0
–30 to +5
–0.5 to V
CC
40
0 to +70
–65 to +150
UNIT
V
V
mA
V
mA
°C
°C
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
V
CC
V
IH
V
IL
I
IK
I
OH
I
OL
T
amb
Supply voltage
High-level input voltage
Low-level input voltage
Input clamp current
High-level output current
Low-level output current
Operating free-air temperature range
0
PARAMETER
MIN
4.5
2.0
0.8
–18
–1
20
+70
NOM
5.0
MAX
5.5
V
V
V
mA
mA
mA
°C
UNIT
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST CONDITIONS
1
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OH
= MAX
Low-level
Low level output voltage
Input clamp voltage
Input current at maximum input voltage
High-level input current
Low-level input current
Short-circuit output current
3
Supply current (total)
I
CCH
I
CCL
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OL
= MAX
V
CC
= MIN, I
I
= I
IK
V
CC
= MAX, V
I
= 7.0V
V
CC
= MAX, V
I
= 2.7V
V
CC
= MAX, V
I
= 0.5V
V
CC
= MAX
V
CC
= MAX
V
IN
= GND
V
IN
= 4.5V
–60
0.9
3.4
±10%V
CC
±5%V
CC
±10%V
CC
±5%V
CC
LIMITS
MIN
2.5
2.7
3.4
0.30
0.30
–0.73
0.50
0.50
–1.2
100
20
–0.6
–150
1.4
5.1
V
µA
µA
mA
mA
mA
V
TYP
2
MAX
UNIT
V
O
OH
High level output voltage
High-level
V
V
O
OL
V
IK
I
I
I
IH
I
IL
I
OS
I
CC
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
CC
= 5V, T
amb
= 25°C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I
OS
tests should be performed last.
March 3, 1989
3
Philips Semiconductors
Product specification
Dual 4-input NAND gate
74F20
AC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST
CONDITION
V
CC
= +5.0V
T
amb
= +25°C
C
L
= 50pF, R
L
= 500Ω
MIN
t
PLH
t
PHL
Propagation delay
Dna, Dnb, Dnc, Dnd to Qn
Waveform 1
2.4
2.0
TYP
3.7
3.2
MAX
5.0
4.3
V
CC
= +5.0V
±
10%
T
amb
= 0°C to +70°C
C
L
= 50pF, R
L
= 500Ω
MIN
2.4
2.0
MAX
6.0
5.3
ns
UNIT
AC WAVEFORMS
Dna, Dnb, Dnc, Dnd
V
M
t
PHL
V
M
t
PLH
Qn
V
M
V
M
SF00069
Waveform 1. Propagation Delay for Inverting Outputs
NOTE:
For all waveforms, V
M
= 1.5V.
TEST CIRCUIT AND WAVEFORMS
V
CC
NEGATIVE
PULSE
V
IN
PULSE
GENERATOR
R
T
D.U.T.
V
OUT
90%
V
M
10%
t
THL (
t
f
)
C
L
R
L
t
w
V
M
10%
t
TLH (
t
r
)
0V
90%
AMP (V)
t
TLH (
t
r
)
90%
POSITIVE
PULSE
V
M
10%
t
w
t
THL (
t
f
)
AMP (V)
90%
V
M
10%
0V
Test Circuit for Totem-Pole Outputs
DEFINITIONS:
R
L
= Load resistor;
see AC ELECTRICAL CHARACTERISTICS for value.
C
L
= Load capacitance includes jig and probe capacitance;
see AC ELECTRICAL CHARACTERISTICS for value.
R
T
= Termination resistance should be equal to Z
OUT
of
pulse generators.
Input Pulse Definition
INPUT PULSE REQUIREMENTS
family
amplitude V
M
74F
3.0V
1.5V
rep. rate
1MHz
t
w
500ns
t
TLH
2.5ns
t
THL
2.5ns
SF00006
March 3, 1989
4
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