VS-20ETS08FP-M3, VS-20ETS12FP-M3
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 20 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
1
2
1
Cathode
2
Anode
• Designed and qualified
JEDEC
®
-JESD 47
• UL pending
according
to
2L TO-220 FullPAK
• Fully isolated package (V
INS
= 2500 V
RMS
)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
20 A
800 V, 1200 V
1.1 V
300 A
150 °C
2L TO-220 FullPAK
Single
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Package
Circuit configuration
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C,
T
J
= 125 °C common heatsink
of 1 °C/W
SINGLE-PHASE BRIDGE
18
THREE-PHASE BRIDGE
22
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
Range
VALUES
20
800, 1200
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETS08FP-M3
VS-20ETS12FP-M3
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
1
Revision: 15-Sep-17
Document Number: 96298
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08FP-M3, VS-20ETS12FP-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 51 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style 2L TO-220 FullPAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
2.8
62
0.5
2
0.07
6.0 (5.0)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
20ETS08FP
20ETS12FP
Revision: 15-Sep-17
Document Number: 96298
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08FP-M3, VS-20ETS12FP-M3
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
35
30
25
20
Maximum Allowable Case Temperature (°C)
150
125
100
DC
180°
120°
90°
60°
30°
RMS limit
Ø
75
180°
120°
90°
60°
30°
Conduction angle
15
10
5
0
Ø
Conduction period
T
J
= 150 °C
50
25
0
4
8
12
16
20
24
0
5
10
15
20
25
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable CaseTemperature (°C)
Peak Half Sine Wave Forward Current (A)
150
300
125
250
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
100
Ø
Conduction period
360°
180°
120°
90°
60°
30°
0
5
10
15
20
25
30
35
200
75
150
50
100
25
50
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average ForwardPower Loss (W)
30
25
20
15
10
5
0
Peak Half Sine Wave Forward Current (A)
180°
120°
90°
60°
30°
300
250
RMS limit
Maximum non-repetitive surge current
vs.
pulse train duration.
Initial T
J
= 150 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
200
150
Ø
Conduction angle
T
J
= 150 °C
0
4
8
12
16
20
24
100
50
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 15-Sep-17
Document Number: 96298
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08FP-M3, VS-20ETS12FP-M3
www.vishay.com
Vishay Semiconductors
1000
I
F
- InstantaneousForward Current (A)
T
J
= 25 °C
100
T
J
= 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Z
thJC
- Transient Thermal Impedance (°C/W)
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
1
10
100
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 15-Sep-17
Document Number: 96298
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS08FP-M3, VS-20ETS12FP-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
-
4
-
5
6
7
8
-
-
-
-
-
-
20
2
E
3
T
4
S
5
12
6
FP
7
-M3
8
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration:
E = single diode
Package:
T = TO-220
Type of silicon:
S = standard recovery rectifier
Voltage ratings
FullPAK
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-20ETS08FP-M3
VS-20ETS12FP-M3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96157
www.vishay.com/doc?95392
Revision: 15-Sep-17
Document Number: 96298
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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