AUTOMOTIVE GRADE
AUIRFR540Z
AUIRFU540Z
HEXFET
®
Power MOSFET
Application
Automatic Voltage Regulator (AVR)
Solenoid Injection
Body Control
Low Power
Automotive Applications
V
DSS
R
DS(on)
typ.
max.
I
D
D
D
100V
22.5m
28.5m
35A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
G
S
D
D-Pak
AUIRFR540Z
I-Pak
AUIRFU540Z
G
Gate
D
Drain
S
Source
Base part number
AUIRFU540Z
AUIRFR540Z
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFU540Z
AUIRFR540Z
AUIRFR540ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
35
25
140
91
0.61
± 20
39
75
See Fig.15,16, 12a, 12b
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.64
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-10-03
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRFR/U540Z
Min. Typ. Max. Units
Conditions
100 ––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.092 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 22.5 28.5 m V
GS
= 10V, I
D
= 21A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 50µA
28
––– –––
S V
DS
= 25V, I
D
= 21A
––– –––
20
V
DS
= 100V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
39
11
12
14
42
43
34
4.5
7.5
1690
180
100
720
110
190
59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 21A
nC
V
DS
= 50V
V
GS
= 10V
V
DD
= 50V
I
D
= 21A
ns
R
G
= 13
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 21A, V
GS
= 0V
ns T
J
= 25°C ,I
F
= 21A, V
DD
= 50V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
Output Capacitance
C
oss
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
–––
–––
–––
32
40
35
140
1.3
48
60
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax ,
starting T
J
= 25°C, L = 0.17mH, R
G
= 25, I
AS
= 21A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
C
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
is measured at T
J
approximately 90°C.
R
2
2017-10-03
AUIRFR/U540Z
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
60µs
PULSE WIDTH
Tj = 25°C
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
10
10
4.5V
60µs
PULSE WIDTH
4.5V
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Tj = 175°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
70
Gfs , Forward Transconductance (S)
60
50
40
30
20
10
0
TJ = 25°C
ID, Drain-to-Source Current
)
100
10
TJ = 175°C
TJ = 175°C
1
TJ = 25°C
VDS = 25V
VDS = 10V
380µs PULSE WIDTH
0.1
2
3
4
60µs
PULSE WIDTH
5
6
7
8
0
10
20
30
40
50
VGS, Gate-to-Source Voltage (V)
ID ,Drain-to-Source Current (A)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
Vs. Drain Current
2017-10-03
3
AUIRFR/U540Z
3000
2500
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 21A
VDS = 80V
VDS= 50V
VDS= 20V
16
C, Capacitance(pF)
2000
Ciss
12
1500
8
1000
500
Coss
Crss
1
10
100
4
0
0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
1msec
ISD , Reverse Drain Current (A)
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
100
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10msec
DC
0.1
0.2
0.4
0.6
0.8
1.0
VGS = 0V
1.2
1.4
10
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2017-10-03
AUIRFR/U540Z
40
2.5
ID , Drain Current (A)
30
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 21A
VGS = 10V
2.0
20
1.5
10
1.0
0
25
50
75
100
125
150
175
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TC , CaseTemperature (°C)
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
C
3
C
Ri (°C/W)
2.626
0.6611
0.7154
i
(sec)
0.000052
0.001297
0.01832
1
2
3
Ci=
iRi
Ci=
iRi
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-10-03
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