UFB200FA40P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 200 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
R
I
F(AV) (1)
at T
C
= 87 °C per module
t
rr
400 V
200 A
60 ns
DESCRIPTION
The UFB200FA40P insulated modules integrate two state of
the art ultrafast recovery rectifiers in the compact, industry
standard SOT-227 package. The planar structure of the
diodes, and the platinum doping life time control, provide a
ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
Note
(1)
Maximum I
RMS
current admitted 100 A to do not exceed the
maximum termperature of terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F (1)
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 25 °C
T
C
= 90 °C
T
C
= 25 °C
T
C
= 90 °C
Any terminal to case, t = 1 minute
TEST CONDITIONS
MAX.
400
202
117
1300
240
2500
- 55 to 150
W
V
°C
A
UNITS
V
Note
(1)
Maximum I
RMS
current admitted 100 A to do not exceed the maximum termperature of terminals
Document Number: 94088
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
UFB200FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
V
BR
V
FM
I
RM
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 100 A
I
F
= 100 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
MIN.
400
-
-
-
-
-
TYP.
-
1.04
0.94
-
-
100
MAX.
-
1.24
1.00
50
4
-
μA
mA
pF
V
UNITS
Reverse leakage current
Junction capacitance
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 150 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
-
93
172
10.5
20.2
490
1740
MAX.
60
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
Weight
Mounting torque
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX.
0.5
0.25
-
-
-
g
Nm
°C/W
UNITS
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94088
Revision: 21-Jul-10
UFB200FA40P
Insulated Ultrafast
Rectifier Module, 200 A
I
F
- Instantaneous Forward Current (A)
1000
1000
Vishay Semiconductors
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
T
J
= 150 °C
T
J
= 125 °C
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
1
0
0.4
0.8
1.2
1.6
0
100
200
300
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
10 000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
10
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.0001
0.001
0.01
0.1
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Document Number: 94088
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
UFB200FA40P
Vishay Semiconductors
160
Insulated Ultrafast
Rectifier Module, 200 A
250
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
200
Allowable Case Temperature (°C)
140
120
100
80
60
40
20
0
0
40
80
120
160
200
240
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
50
100
DC
I
F
= 150 A
I
F
= 75 A
t
rr
(ns)
150
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
160
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
5000
4500
4000
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 150 A
I
F
= 75 A
Average Power Loss (W)
140
120
3500
Q
rr
(nC)
100
80
60
40
20
0
0
20
40
60
80
100
DC
RMS limit
3000
2500
2000
1500
1000
500
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
120
140
160
0
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94088
Revision: 21-Jul-10
UFB200FA40P
Insulated Ultrafast
Rectifier Module, 200 A
V
R
= 200 V
Vishay Semiconductors
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94088
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
