SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
40
± 20
50
a
44
14
b
11.2
b
100
40
2.6
b
30
45
48.1
30.8
3.1
b
2.0
b
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
I
DM
I
S
I
AS
E
AS
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
A
mJ
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
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1
b
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
32
2.1
Maximum
40
2.6
Unit
°C/W
SUD50N04-8m8P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 1.0 mA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
Min.
40
Typ.
Max.
Unit
V
44
- 5.9
1.5
3.0
± 100
1
20
50
0.0069
0.0084
75
2400
0.0088
0.0105
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 20 V, R
L
= 1
Ω
I
D
≅
20 A, V
GEN
= 4.5 V, R
g
= 1
Ω
2.5
260
100
37
16
6.5
4.5
5.5
30
15
45
15
9
8.5
45
25
70
25
15
10
60
10
40
100
0.81
22
14
11
11
1.2
35
25
56
24
pF
nC
Ω
ns
V
DD
= 20 V, R
L
= 1
Ω
I
D
≅
20 A, V
GEN
= 10 V, R
g
= 1
Ω
5
40
5
T
C
= 25 °C
I
S
= 10 A
A
V
ns
nC
ns
I
F
= 20 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10
V
thru 5
V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 4
V
80
100
60
60
40
40
T
C
= 25 °C
20
T
C
= 125 °C
0
T
C
= - 55 °C
20
V
GS
= 3
V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
1.5
0.012
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
1.2
I
D
- Drain Current (A)
0.010
V
GS
= 4.5
V
0.008
0.9
0.6
T
C
= 25 °C
0.3
T
C
= 125 °C
0.0
0
1
2
3
4
5
T
C
= - 55 °C
V
GS
= 10
V
0.006
0.004
0
20
40
60
80
100
V
GS
- Gate-to-Source
Voltage
(V)
I
D
- Drain Current (A)
Transfer Characteristics
3200
C
iss
2400
C - Capacitance (pF)
10
On-Resistance vs. Drain Current
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
V
DS
= 20
V
6
V
DS
= 30
V
4
1600
800
C
oss
C
rss
0
5
10
15
20
2
0
0
0
10
20
30
40
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
Gate Charge
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3
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
I
D
= 20 A
1.7
R
DS(on)
- On-Resistance
V
GS
= 10
V
10
I
S
- Source Current (A)
100
T
J
= 25 °C
(Normalized)
1.4
V
GS
= 4.5
V
1.1
1
T
J
= 150 °C
0.1
T
J
= - 55 °C
0.01
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.030
I
D
= 7.2 A
R
DS(on)
- On-Resistance (Ω)
0.025
0.2
0.020
V
GS(th)
Variance
(V)
0.6
Source-Drain Diode Forward Voltage
- 0.2
I
D
= 1 mA
- 0.6
0.015
T
J
= 125 °C
0.010
I
D
= 250
µA
0.005
0
2
4
T
J
= 25 °C
6
8
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
500
1000
Threshold Voltage
Limited
by
R
DS(on)
*
400
I
D
- Drain Current (A)
100
10
µs
100
µs
10
1 ms
10 ms,
100 ms, DC
Power (W)
300
200
T
A
= 25 °C
100
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
0
0.0001
0.001
0.01
Time (s)
0.1
1
10
0.01
0.1
Single Pulse, Junction-to-Ambient
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
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Document Number: 68647
S10-0109-Rev. B, 18-Jan-10
SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
45
I
D
- Drain Current (A)
Package Limited
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*, Junction-to-Case
4.0
3.5
3.0
Power (W)
Power (W)
0
25
50
75
100
125
150
2.5
2.0
1.5
1.0
0.5
0.0
20
10
0
0
25
50
75
100
125
150
70
60
50
40
30
T
J
- Junction Temperature (°C)
T
J
- Junction Temperature (°C)
Power Derating, Junction-to-Ambient
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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