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BC546BTAR

产品描述Bipolar Transistors - BJT NPN Si Transistor Epitaxial
产品类别分立半导体    晶体管   
文件大小316KB,共9页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准
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BC546BTAR概述

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

BC546BTAR规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Fairchild
零件包装代码TO-92
包装说明CYLINDRICAL, O-PBCY-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性LOW NOISE
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压65 V
配置SINGLE
最小直流电流增益 (hFE)200
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
JESD-609代码e3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
峰值回流温度(摄氏度)NOT APPLICABLE
极性/信道类型NPN
最大功率耗散 (Abs)0.625 W
认证状态Not Qualified
表面贴装NO
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT APPLICABLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)300 MHz

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
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BC546BTAR相似产品对比

BC546BTAR BC546ATAR BC546 BC546ATA BC546A BC546CBU
描述 Bipolar Transistors - BJT NPN Si Transistor Epitaxial Bipolar Transistors - BJT NPN Si Transistor Epitaxial Bipolar Transistors - BJT NPN 65V 100mA HFE/8 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK Bipolar Transistors - BJT NPN 65V 100mA HFE/220 Bipolar Transistors - BJT NPN 65V 100mA HFE/800
是否Rohs认证 符合 符合 符合 符合 符合 符合
零件包装代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 LEAD FREE, TO-92, 3 PIN CYLINDRICAL, O-PBCY-T3
针数 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
是否无铅 不含铅 - 不含铅 不含铅 不含铅 -
厂商名称 Fairchild Fairchild Fairchild Fairchild Fairchild -
其他特性 LOW NOISE LOW NOISE LOW NOISE LOW NOISE - LOW NOISE
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A - 0.1 A
集电极-发射极最大电压 65 V 65 V 65 V 65 V - 65 V
配置 SINGLE SINGLE SINGLE SINGLE - SINGLE
最小直流电流增益 (hFE) 200 110 110 110 - 420
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92 - TO-92
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3
JESD-609代码 e3 e3 e1 e3 - e3
元件数量 1 1 1 1 - 1
端子数量 3 3 3 3 - 3
最高工作温度 150 °C 150 °C 150 °C 150 °C - 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND - ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL
峰值回流温度(摄氏度) NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT SPECIFIED - NOT APPLICABLE
极性/信道类型 NPN NPN NPN NPN - NPN
最大功率耗散 (Abs) 0.625 W 0.625 W 0.5 W 0.625 W - 0.5 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
表面贴装 NO NO NO NO - NO
端子面层 Matte Tin (Sn) Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) - Matte Tin (Sn)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM - BOTTOM
处于峰值回流温度下的最长时间 NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT SPECIFIED - NOT APPLICABLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON - SILICON
标称过渡频率 (fT) 300 MHz 300 MHz 300 MHz 300 MHz - 300 MHz
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