refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTF2955/D
May, 2013
−
Rev. 6
1
NTF2955, NVF2955, NVF2955P
ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
=
−60
V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
=
−250
mA
−60
66.4
−1.0
−50
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
=
−1.0
mA
V
GS
=
−10
V, I
D
=
−0.75
A
V
GS
=
−10
V, I
D
=
−1.5
A
V
GS
=
−10
V, I
D
=
−2.4
A
−2.0
145
150
154
1.77
−4.0
170
180
185
V
mW
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
g
FS
V
GS
=
−15
V, I
D
=
−0.75
A
S
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
492
165
50
pF
V
GS
= 10 V, V
DS
= 30 V,
I
D
= 1.5 A
14.3
1.2
2.3
5.2
nC
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DD
= 25 V,
I
D
= 1.5 A, R
G
= 9.1
W
R
L
= 25
W
11
7.6
65
38
ns
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V,
I
S
= 1.5 A
T
J
= 25°C
T
J
= 125°C
−1.10
−0.9
36
−1.30
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 1.5 A
20
16
0.139
ns
nC
3. Pulse Test: pulse width
≤
300ms, duty cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTF2955, NVF2955, NVF2955P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
10
−I
D,
DRAIN CURRENT (AMPS)
−I
D,
DRAIN CURRENT (AMPS)
V
GS
=
−6
V
8
6
V
GS
=
−5
V
4
V
GS
=
−4.5
V
2
V
GS
=
−3.8
V
0
0
1
2
3
4
5
6
7
8
9
10
V
GS
=
−10
V to
−7
V
T
J
= 25
°C
V
GS
=
−5.5
V
10
8
6
4
2
0
V
DS
≥
10 V
T
J
=
−55°C
T
J
= 25°C
T
J
= 125°C
2
4
6
8
10
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.4
V
GS
=
−10
V
0.25
T
J
= 25°C
0.225
0.2
0.3
T
J
= 125°C
0.175
0.15
V
GS
=
−10
V
V
GS
=
−15
V
0.2
T
J
= 25°C
T
J
=
−55°C
0.125
0.1
0.1
0.075
0.05
0
2
4
6
8
10
0
0
2
4
6
8
10
−I
D,
DRAIN CURRENT (AMPS)
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance versus Drain Current
and Temperature
1000
I
D
=
−1.5
A
V
GS
=
−10
V
−I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
30
35
40
45
50
55
60
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
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3
Figure 6. Drain−to−Source Leakage Current
versus Voltage
NTF2955, NVF2955, NVF2955P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1200
1000
C, CAPACITANCE (pF)
800
600
400
200
0
10
C
oss
C
rss
5
−V
GS
0
−V
DS
5
10
15
20
25
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
= 0 V
C
iss
V
GS
= 0 V
T
J
= 25°C
12
10
8
6
4
V
DS
2
0
I
D
=
−1.5
A
T
J
= 25°C
0
2
4
6
8
10
12
Q
g
, TOTAL GATE CHARGE (nC)
14
10
0
16
Q
T
60
50
V
GS
40
30
20
C
rss
C
iss
Q
GS
Q
GD
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
5
−I
S
, SOURCE CURRENT (AMPS)
4
3
2
1
V
DD
=
−25
V
I
D
=
−1.5
A
V
GS
=
−10
V
t
d(off)
t
f
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
100
10
t
d(on)
t
r
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
100
−I
D
, DRAIN CURRENT (AMPS)
250
Figure 10. Diode Forward Voltage versus Current
10
V
GS
=
−20
V
SINGLE PULSE
T
C
= 25°C
I
PK
=
−6.7
A
200
150
100
50
0
10
ms
100
ms
1 ms
1
dc
0.1
10 ms
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
25
50
75
100
125
150
175
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTF2955, NVF2955, NVF2955P
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
D
b1
4
H
E
E
1
2
3
e1
b
e
A
q
L
L1
C
q
0.08 (0003)
A1
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
mm
inches
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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