PD - 96030
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
l
IRF9540NSPbF
IRF9540NLPbF
V
DSS
= -100V
R
DS(on)
= 117mΩ
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF9540NS/L
P-Channel
Lead-Free
D
G
S
I
D
= -23A
D
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D
G
D
S
G
D
S
D
2
Pak
IRF9540NSPbF
G
D
TO-262
IRF9540NLPbF
S
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Gate
Drain
Max.
-23
-14
-92
3.1
110
0.9
± 20
84
-14
11
-13
-55 to + 150
300 (1.6mm from case )
Source
Units
A
c
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
Peak Diode Recovery dv/dt
e
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
c
d
Thermal Resistance
Parameter
R
θJC
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
R
θJA
Typ.
Max.
1.1
40
Units
°C/W
www.irf.com
g
–––
–––
1
09/30/05
IRF9540NS/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100
–––
–––
-2.0
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
73
13
38
13
64
40
45
4.5
7.5
1450
430
230
–––
–––
117
-4.0
–––
-50
-250
100
-100
110
20
57
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
nA
V
mΩ
V
S
µA
Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= -10V, I
D
= -14A
V
DS
= -50V, I
D
= -14A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -14A
V
DS
= -80V
V
GS
= -10V
V
DD
= -50V
I
D
= -14A
R
G
= 5.1Ω
V
GS
= -10V
V/°C Reference to 25°C, I
D
= -1mA
V
DS
= V
GS
, I
D
= -250µA
f
f
f
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
140
890
-23
A
-92
-1.6
210
1340
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -14A, V
GS
= 0V
di/dt = -100A/µs
Ã
T
J
= 25°C, I
F
= -14A, V
DD
= -25V
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
Starting T
J
= 25°C, L = 0.88mH
R
G
= 25Ω, I
AS
= -14A. (See Figure 12)
I
SD
≤
-14A, di/dt
≤
-620A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
2
www.irf.com
IRF9540NS/LPbF
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-ID, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
-4.5V
1
-4.5V
≤60µs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.1
0.1
1
≤60µs
PULSE WIDTH
Tj = 150°C
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25°C
-ID, Drain-to-Source Current (A)
TJ = 150°C
10
ID = -14A
VGS = -10V
1.5
1
1.0
VDS = -50V
0.1
2
4
6
8
10
≤60µs
PULSE WIDTH
12
14
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
-VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
www.irf.com
Fig 4.
Normalized On-Resistance
vs. Temperature
3
IRF9540NS/LPbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= -14A
-VGS, Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
VDS = -80V
VDS = -50V
VDS = -20V
Ciss
1000
Coss
Crss
12
8
4
100
1
10
-VDS , Drain-to-Source Voltage (V)
100
0
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
-ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
-ISD , Reverse Drain Current (A)
TJ = 150°C
10
100
10
100µsec
1msec
1
TJ = 25°C
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-VSD , Source-to-Drain Voltage (V)
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF9540NS/LPbF
V
DS
R
D
24
R
G
V
GS
D.U.T.
+
20
-ID, Drain Current (A)
-10V
16
12
8
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
4
0
25
50
75
100
125
150
10%
90%
V
DS
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
3
Ri (°C/W)
0.1737838 0.0000610
0.4335992 0.0019590
0.4921007 0.0260060
τ
2
τ
3
0.01
Ci=
τi/Ri
Ci
i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
-
V
DD
τi
(sec)
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
