VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
FEATURES
•
•
•
•
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
Anode
TO-220AB
Anode
2
1 Common 3
cathode
•
•
•
•
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 15 A
35 V, 45 V
See Electrical table
40 mA at 125 °C
150 °C
Common cathode
16 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
T
C
= 130 °C (per leg)
t
p
= 5 μs sine
30 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
VALUES
30
35/45
30
1060
0.73
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
35
V
RWM
35
45
45
V
VS-MBR2535CTPbF
VS-MBR2535CT-N3
VS-MBR2545CTPbF
VS-MBR2545CT-N3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 130 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 130 °C
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated load
condition and with rated V
RRM
applied
VALUES
15
30
30
A
1060
150
16
2
mJ
A
UNITS
Peak repetitive forward current per leg
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 30-Aug-11
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94291
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
SYMBOL
V
FM (1)
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
30 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.82
0.73
0.2
40
0.355
12.3
700
8.0
10 000
UNITS
V
Maximum instantaneous reverse current
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 65 to 150
- 65 to 175
1.5
°C/W
0.50
2
0.07
Non-lubricated threads
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
Case style TO-220AB
MBR2535CT
MBR2545CT
Revision: 30-Aug-11
Document Number: 94291
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
10
1
0.1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
0.01
0.001
0.0001
T
J
= 50 °C
T
J
= 25 °C
0
5
10
15
20
25
30
35
40
45
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 30-Aug-11
Document Number: 94291
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
Vishay Semiconductors
14
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
6
4
2
0
DC
150
Allowable Case Temperature (°C)
140
DC
130
Square
wave
(D = 0.50)
Rated
V
R
applied
Average Power Loss (W)
12
10
8
120
110
See note (1)
100
0
4
8
12
16
20
24
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 30-Aug-11
Document Number: 94291
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
-
-
-
-
-
2
25
3
45
4
CT
5
PbF
6
Vishay Semiconductors product
Schottky MBR series
Current rating (30 A)
Voltage ratings
CT = Essential part number
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
35 = 35 V
45 = 45 V
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR2535CTPbF
VS-MBR2535CT-N3
VS-MBR2545CTPbF
VS-MBR2545CT-N3
QUANTITY PER T/R
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220AB PbF
TO-220AB -N3
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
Revision: 30-Aug-11
Document Number: 94291
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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