PD - 96098A
Features
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IRF2903ZSPbF
IRF2903ZLPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 30V
R
DS(on)
= 2.4mΩ
G
S
I
D
= 75A
D
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
G
D
G
D
S
G
D
S
D
2
Pak
TO-262
D
S
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Gate
Drain
Max.
235
166
75
1020
231
1.54
± 20
231
820
See Fig.12a, 12b, 15, 16
-55 to + 175
Source
Units
A
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
d
Ã
h
W
W/°C
V
mJ
A
mJ
°C
g
300 (1.6mm from case )
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
Parameter
Typ.
Max.
0.65
62
40
Units
j
ij
–––
–––
–––
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1
07/22/10
IRF2903ZS/ZLPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
30
–––
–––
2.0
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
1.9
–––
–––
–––
–––
–––
–––
160
51
58
24
100
48
37
4.5
7.5
6320
1980
1100
5930
2010
3050
–––
–––
2.4
4.0
–––
20
250
200
-200
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
mΩ
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 10V, I
D
= 75A
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 75A
V
DS
= 24V
V
GS
= 10V
V
DD
= 15V
I
D
= 75A
R
G
= 3.2
Ω
V
GS
= 10V
e
nC
e
e
ns
nH
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 24V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 24V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
34
29
75
A
1020
1.3
51
44
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 15V
di/dt = 100A/µs
Ã
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
2
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IRF2903ZS/ZLPbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
≤
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
240
Gfs, Forward Transconductance (S)
TJ = 25°C
200
160
120
80
40
0
0
20
40
60
80 100 120 140 160 180
ID, Drain-to-Source Current (A)
TJ = 175°C
ID, Drain-to-Source Current
(Α)
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
VDS = 25V
≤
60µs PULSE WIDTH
VDS = 10V
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
380µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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IRF2903ZS/ZLPbF
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
16
10000
VDS = 24V
VDS= 15V
C, Capacitance (pF)
Ciss
6000
12
8
4000
Coss
2000
4
Crss
0
1
10
100
0
0
40
80
120
160
200
240
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
TJ = 175°C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100.0
1000
1msec
100
100µsec
10.0
TJ = 25°C
1.0
10
LIMITED BY PACKAGE
10msec
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
0.1
10
100
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2903ZS/ZLPbF
RDS(on) , Drain-to-Source On Resistance
(Normalized)
240
200
Limited By Package
2.0
ID = 75A
VGS = 10V
ID, Drain Current (A)
160
120
80
40
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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