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SGA3386Z

产品描述RF Amplifier DC-5GHz SSG 15.3dB NF 3.5dB SiGe
产品类别无线/射频/通信    射频和微波   
文件大小796KB,共7页
制造商Qorvo
官网地址https://www.qorvo.com
标准
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SGA3386Z概述

RF Amplifier DC-5GHz SSG 15.3dB NF 3.5dB SiGe

SGA3386Z规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Qorvo
包装说明HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN
Reach Compliance Codecompliant
ECCN代码5A991.G
特性阻抗50 Ω
构造COMPONENT
增益15.5 dB
最大输入功率 (CW)18 dBm
JESD-609代码e3
安装特点SURFACE MOUNT
功能数量1
端子数量4
最大工作频率5000 MHz
最小工作频率
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码SL,4GW-LD,.085CIR
电源2.6 V
射频/微波设备类型WIDE BAND LOW POWER
最大压摆率39 mA
表面贴装YES
技术BIPOLAR
端子面层Matte Tin (Sn)

文档预览

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SGA3386ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA3386Z
Package: SOT-86
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Product Description
The SGA3386Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Gain (dB)
15
IRL
Features
Gain & Return Loss vs. Frequency
GAIN
-10
-20
-30
-40
Return Loss (dB)
10
ORL
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
0
0
1
2
3
4
Frequency (GHz)
EW
5
SiGe HBT
5
FO
Parameter
Small Signal Gain
R
Min.
15.5
Specification
Typ.
17.0
15.3
14.4
12.3
10.7
24.3
23.8
5000
N
D
6
ES
T
L
=+25ºC
20
V
D
= 2.6 V, I
D
= 35 mA (Typ.)
0
Max.
19.0
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>8dB
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
17.0
dB
1950MHz
Output Return Loss
24.2
dB
1950MHz
Noise Figure
3.5
dB
1950MHz
Device Operating Voltage
2.3
2.6
2.9
V
Device Operating Current
31
35
39
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=5V, I
D
=35mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=68Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
N
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS20151111
O
T
Output Power at 1dB Compression
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
IG
N
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
S
High Gain: 15.3dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Condition
1 of 7

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