DISCRETE SEMICONDUCTORS
DATA SHEET
BFS520
NPN 9 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
Code: N2
Top view
1
BFS520
handbook, 2 columns
3
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
G
UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
up to T
s
= 118
C;
note 1
I
C
= 20 mA; V
CE
= 6 V; T
j
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
c
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
c
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
R
BE
= 0
CONDITIONS
open emitter
MIN.
60
TYP.
120
9
15
1.1
MAX.
20
15
70
300
250
1.6
GHz
dB
dB
UNIT
V
V
mA
mW
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 118
C;
note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
65
MIN.
MAX.
20
15
2.5
70
300
150
175
UNIT
V
V
V
mA
mW
C
C
September 1995
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C,
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CE
= 6 V
I
C
= 20mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
MIN.
60
13
TYP.
120
1
0.5
0.4
9
15
9
14
1.1
1.6
1.9
17
26
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 118
C;
note 1
BFS520
THERMAL RESISTANCE
190 K/W
MAX.
50
250
1.6
2.1
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
maximum unilateral power gain I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
(note 1)
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
C
S
21
2
F
insertion power gain
noise figure
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
C
P
L1
ITO
Notes
output power at 1 dB gain
compression
third order intercept point
I
c
= 20 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
note 2
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
---------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
2. I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2pq)
= 898 MHz and at f
(2qp)
= 904 MHz.
September 1995
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
MRC030 - 1
MRC028
400
handbook, halfpage
Ptot
(mW)
300
handbook, halfpage
200
h FE
150
200
100
100
50
0
0
50
100
150
T (
o
C)
s
200
0
10
−2
10
−1
1
10
I C (mA)
10
2
V
CE
= 6 V; T
j
= 25
C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
MRC021
MRC022
0.7
handbook, halfpage
C re
(pF)
0.6
0.5
handbook, halfpage
f
12
T
(GHz)
10
VCE = 8 V
8
0.4
6
0.3
4
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
2
3V
0
1
10
I C (mA)
100
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
C.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
September 1995
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
In Figs 6 to 9, G
UM
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available
gain.
MRC027
BFS520
handbook, halfpage
20
G UM
(dB)
25
handbook, halfpage
gain
(dB)
20
MRC026
MSG
18
15
16
VCE = 6 V
10
3V
14
5
12
0
10
0
10
20
I C (mA)
30
V
CE
= 6 V; f = 2 GHz; T
amb
= 25
C.
G max
G UM
0
10
20
I C (mA)
30
V
CE
= 6 V; f = 900 MHz; T
amb
= 25
C.
Fig.6
Maximum unilateral power gain as a
function of collector current.
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
40
MRC024
MRC025
handbook, halfpage
50
G UM
gain
(dB)
40
G UM
30
MSG
20
G max
30
MSG
20
G max
10
10
0
10
−2
10
−1
1
f (GHz)
10
0
10
−2
10
−1
1
f (GHz)
10
I
C
= 5 mA; V
CE
= 6 V; T
amb
= 25
C.
I
C
= 20 mA; V
CE
= 6 V; T
amb
= 25
C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
September 1995
5
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