Product Data Sheet
August 5, 2008
10Gb/s Wide Dynamic Range Differential TIA
TGA4817
Key Features and Performance
•
•
•
•
•
•
•
•
3200Ω Single-Ended Transimpedance
> 9 GHz 3dB Bandwidth
> 1.6mA RMS Input Overload Current
11pA/
√Hz
Input Noise Current
Rx Signal Indicator (RSSI)
0.15µm 3MI pHEMT Technology
Bias Conditions: 3.3V, 70mA
Chip dimensions: 1.20 x 1.20 x 0.10 mm
(0.047 x 0.047 x 0.004 in)
Preliminary Measured Performance
79
76
Differential Zt (dB-Ohm)
73
70
67
64
61
58
55
52
1
Differential Transimpedance
S22 Non-Inverting Output
S22 Inverting Output
Bias Conditions: V
+
=3.3V I
+
=70mA
C
PIN
= 0.2 pF
R
PIN
= 15 Ohm
L
BW
= 1 nH
0
-3
-6
-9
-12
-15
-18
-21
-24
-27
Output Return Loss (dB)
Primary Applications
•
OC-192/STM-64 Fiber Optic
Systems
3
5
7
9
11
Frequency (GHz)
13
15
10.0Gb/s, 2
31
-1 PRBS, I
PD
= 95 uA RMS
Note: Datasheet is subject to change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
TGA4817
TABLE I
MAXIMUM RATINGS
Symbol
V
+
I
+
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
3/
4/
5/
Parameter 1/
Positive Supply Voltage
Positive Supply Current (Quiescent)
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
5.5 V
80 mA
14.5 dBm
0.44 W
117
°C
320
°C
-65 to 117
°C
Notes
2/
2/
2/
2/
4/ 5/
These ratings represent the maximum operable values for this device.
Current is defined under no RF drive conditions. Combinations of supply voltage,
supply current, input power, and output power shall not exceed P
D
.
When operated at this power dissipation with a base plate temperature of 70
°C,
the
median life is 1 E+6 hours.
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (T
M
).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25°C, Nominal)
+
+
(V = 3.3V, I = 70mA) 1/
Parameter
Single-Ended Transimpedance (1GHz)
3dB Transimpedance Bandwidth
Low Frequency 3dB Cut-Off
Transimpedance Ripple (1 to 7GHz)
Group Delay Variation (1 to 7GHz)
Ave Eq. Noise Current (1 to 7GHz)
Output Return Loss (0.1 to F3dB)
Input Overload Current
Sensitivity
Single-Ended Limited Output Voltage
1/
2/
3/
4/
5/
50Ω Single-Ended Output Impedance
Typical
3200
9
< 40
1.5
±15
11
12
1.6
10
600
Product Data Sheet
August 5, 2008
TGA4817
Unit
Ω
GHz
kHz
dBpp
ps
pA/√Hz
dB
mA RMS
uA RMS
mVpp
Notes
2/ 3/
2/ 3/
4/
2/ 3/
2/ 3/
3/
2/ 3/
5/
5/
Photodiode& Bond Wire Model: CPD = 0.2pF, RPD = 15Ω, LBW = 1.0 nH
RF Output Interconnect Inductance: 0.42nH
External Bypass Capacitors Required (see assembly drawing)
10GBit/s, 2 -1 PRBS, BER < 10
31
-12
TABLE III
THERMAL INFORMATION
Parameter
R
θJC
Thermal
Resistance
(channel to backside of
carrier)
Test Conditions
V
+
= 3.3 V
I
+
= 70 mA
Pdiss = 0.231 W
T
CH
(
o
C)
81
R
θJC
(°C/W)
48.2
T
M
(HRS)
5.1 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
TGA4817
Typical Fixtured Performance
Optical Eye 10Gbps PRBS 2
31
-1
Photodiode Current = 9.5 uA RMS
Photodiode Current = 1.5 mA RMS
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
TGA4817
Typical Fixtured Performance
1.E-04
1.E-05
1.E-06
Bit Error Rate
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
1.E-14
0.001
1000
Output Voltage (mVpp)
0.010
0.100
1.000
10.000
Photodiode Current (mA RMS)
100
10
0.01
0.10
Photodiode Current (mA RMS)
1.00
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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